Inventor · disambiguated record
Harry Chuang
Also filed as: CHUANG HARRY · CHUANG HARRY-HAKLAY
28 granted patents·30 pending applications·546 citations·filing 2001–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD28TAIWAN SEMICONDUCTOR MFG20CHUANG HARRY4THEI KONG-BENG2CHUNG SHENG-CHEN1
Top patents by PatentIndex Score
58 records- 0197US6854100B1Methodology to characterize metal sheet resistance of copper damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 8, 2005·313 cites·17 claims
- 0293US7407835B2Localized slots for stress relieve in copperTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 5, 2008·21 cites·31 claims
- 0392US6828223B2Localized slots for stress relieve in copperTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 7, 2004·55 cites·31 claims
- 0489US8174091B2Fuse structureTHEI KONG-BENG·Filed 2009·Granted May 8, 2012·13 cites·20 claims
- 0587US8120086B2Low leakage capacitors including portions in inter-layer dielectricsLAW OSCAR M K·Filed 2008·Granted Feb 21, 2012·14 cites·17 claims
- 0687US7915111B2Semiconductor device with high-K/dual metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 29, 2011·21 cites·14 claims
- 0785US6867441B1Metal fuse structure for saving layout areaTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·48 cites·21 claims
- 0882US8294216B2Integrating the formation of I/O and core MOS devices with MOS capacitors and resistorsCHUANG HARRY·Filed 2008·Granted Oct 23, 2012·8 cites·20 claims
- 0981US2025365976A1Memory Structure And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US2025349618A1Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US2025357324A1Passive devices in bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1278US2025323190A1Cap layer for pad oxidation preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1376US2025359485A1Magnetic tunnel junction device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1476US2025316587A1Semiconductor device having inductor and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1575US8728900B2Integrating the formation of I/O and core MOS devices with MOS capacitors and resistorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 20, 2014·3 cites·20 claims
- 1674US2025343115A1Semiconductor device including insulating structure surrounding through via and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US2025316643A1Wafer bonding method and bonded device structureTQIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1873US2025309132A1Wafer bonding method and bonded wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1972US6831349B2Method of forming a novel top-metal fuse structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 14, 2004·16 cites·35 claims
- 2071US12464955B2Magnetic tunnel junction device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 2170US2024243080A1Cap layer for pad oxidation preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2268US12278166B2High bandwidth package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 2368US8487382B2Device scheme of HKMG gate-last processCHUNG SHENG-CHEN·Filed 2011·Granted Jul 16, 2013·2 cites·20 claims
- 2468US6638796B2Method of forming a novel top-metal fuse structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·12 cites·41 claims
- 2568US2023377968A1Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2668US2024071911A1Semiconductor device having inductor and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2767US8138554B2Semiconductor device with local interconnectsCHUANG HARRY·Filed 2008·Granted Mar 20, 2012·3 cites·11 claims
- 2867US2024088026A1Passive devices in bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2966US12381158B2Wafer bonding method and bonded device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 3066US7833848B2Method for removing hard masks on gates in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 16, 2010·2 cites·13 claims
- 3166US7632729B2Method for semiconductor device performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 15, 2009·3 cites·16 claims
- 3264US2023299041A1Wafer Bonding Method and Bonded Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3364US2024096753A1Semiconductor device including insulating structure surrounding through via and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3463US2023292525A1Memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3562US7298011B2Semiconductor device with recessed L-shaped spacer and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 20, 2007·2 cites·19 claims
- 3661US2025120323A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3761US2024268236A1Magnetic tunnel junction (mtj) having a diffusion blocking spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3861US2025391705A1Semiconductor die packages and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3960US2025336851A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4058US2025155659A1Photonic package and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4157US2025234793A1Semiconductor structure including memory unit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4256US2025063956A1Semiconductor structure, semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4355US2024234401A9Semiconductor die package and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4455US2024332170A1Inductor embedded in a substrate of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4554US7812379B2SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 12, 2010·0 cites·8 claims
- 4654US7803674B2Methods for fabricating SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Sep 28, 2010·0 cites·8 claims
- 4753US8115271B2Reducing device performance drift caused by large spacings between active regionsCHUANG HARRY·Filed 2011·Granted Feb 14, 2012·0 cites·20 claims
- 4852US7154182B2Localized slots for stress relieve in copperTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 26, 2006·3 cites·10 claims
- 4952US7030497B2Localized slots for stress relieve in copperTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 18, 2006·3 cites·20 claims
- 5051US7655984B2Semiconductor device with discontinuous CESL structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 2, 2010·3 cites·16 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →