Inventor · disambiguated record
Harry-Hak-Lay Chuang
Also filed as: CHUANG HARRY · CHUANG HARRY-HAK-LAY
461 granted patents·80 pending applications·2,199 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD359TAIWAN SEMICONDUCTOR MFG102CHUANG HARRY HAK-LAY18CHUANG HARRY11CHEW HAN-GUAN5
Top patents by PatentIndex Score
541 records- 0199US9818935B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·67 cites·20 claims
- 0298US10270025B2Semiconductor structure having magnetic tunneling junction (MTJ) layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·20 cites·20 claims
- 0398US10038137B2MRAM device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·50 cites·20 claims
- 0498US9502466B1Dummy bottom electrode in interconnect to reduce CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·81 cites·20 claims
- 0598US8754470B1Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 17, 2014·52 cites·19 claims
- 0698US8105891B2Method for tuning a work function of high-K metal gate devicesYEH CHIUNG-HAN·Filed 2010·Granted Jan 31, 2012·124 cites·20 claims
- 0797US10825499B2Magnetic random access memory structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·8 cites·20 claims
- 0897US10504958B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 0997US9893278B1Embedded memory device between noncontigous interconnect metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·30 cites·20 claims
- 1097US9583591B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·20 cites·20 claims
- 1197US8557659B2Spacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 15, 2013·23 cites·20 claims
- 1297US7919792B2Standard cell architecture and methods with variable design rulesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 5, 2011·70 cites·15 claims
- 1396US11830875B2Method to embed planar FETS with FINFETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·2 cites·20 claims
- 1496US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 1596US10522740B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·14 cites·17 claims
- 1696US9666790B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·12 cites·20 claims
- 1796US9659953B2HKMG high voltage CMOS for embedded non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·18 cites·20 claims
- 1896US8183644B1Metal gate structure of a CMOS semiconductor deviceCHUANG HARRY HAK-LAY·Filed 2011·Granted May 22, 2012·27 cites·20 claims
- 1996US8173491B2Standard cell architecture and methods with variable design rulesLAW OSCAR M K·Filed 2011·Granted May 8, 2012·34 cites·20 claims
- 2096US7923321B2Method for gap filling in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Apr 12, 2011·64 cites·20 claims
- 2195US11659775B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 2295US11551736B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·4 cites·20 claims
- 2395US10790439B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 2495US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 2595US9780301B1Method for manufacturing mixed-dimension and void-free MRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·18 cites·20 claims
- 2695US9634243B1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·18 cites·20 claims
- 2795US8093120B2Integrating a first contact structure in a gate last processYEH CHIUNG-HAN·Filed 2010·Granted Jan 10, 2012·21 cites·20 claims
- 2895US8039381B2Photoresist etch back method for gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Oct 18, 2011·33 cites·14 claims
- 2995US8035165B2Integrating a first contact structure in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 11, 2011·25 cites·20 claims
- 3095US2025365950A1Embedded flash memory device with floating gate embedded in a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3194US12136627B23DIC structure for high voltage device on a SOI substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·2 cites·20 claims
- 3294US11978740B2Semiconductor-on-insulator (SOI) semiconductor structures including a high-k dielectric layer and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 3394US11889769B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 3494US11653572B2Manufacturing techniques and corresponding devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 3594US10727274B2Techniques for MRAM top electrode via connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·8 cites·20 claims
- 3694US9893120B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·20 claims
- 3794US9865610B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·9 cites·20 claims
- 3894US9508721B2Metal gate structure of a CMOS semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·8 cites·20 claims
- 3994US7977181B2Method for gate height control in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 12, 2011·35 cites·20 claims
- 4094US7898037B2Contact scheme for MOSFETsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·33 cites·13 claims
- 4193US11322543B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 4293US10032828B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·12 cites·19 claims
- 4393US9985075B2Dummy bottom electrode in interconnect to reduce CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·8 cites·20 claims
- 4493US9716222B1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·15 cites·16 claims
- 4593US9368603B2Contact for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 14, 2016·11 cites·19 claims
- 4693US8450834B2Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layersNG JIN-AUN·Filed 2010·Granted May 28, 2013·16 cites·25 claims
- 4793US8343867B2Method for main spacer trim-backTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·16 cites·20 claims
- 4893US8304840B2Spacer structures of a semiconductor deviceTEO LEE-WEE·Filed 2010·Granted Nov 6, 2012·12 cites·20 claims
- 4992US12414380B2Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·1 cites·20 claims
- 5092US11785862B2Via landing enhancement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
Showing the top 50 of 541 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →