Inventor · disambiguated record
Hak-Lay Chuang
Also filed as: CHUANG HAK LAY
21 granted patents·1 pending application·229 citations·filing 1997–2025
95Inventor score
Top patents by PatentIndex Score
22 records- 0194US8742492B2Device with a vertical gate structureCHUANG HAK-LAY·Filed 2012·Granted Jun 3, 2014·19 cites·19 claims
- 0290US8703595B2N/P boundary effect reduction for metal gate transistorsCHUANG HAK-LAY·Filed 2011·Granted Apr 22, 2014·9 cites·20 claims
- 0387US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 0485US8546227B2Contact for high-K metal gate deviceCHUANG HAK-LAY·Filed 2011·Granted Oct 1, 2013·7 cites·13 claims
- 0584US8530326B2Method of fabricating a dummy gate structure in a gate last processLAI SU-CHEN·Filed 2012·Granted Sep 10, 2013·6 cites·17 claims
- 0682US8753931B2Cost-effective gate replacement processZHU MING·Filed 2012·Granted Jun 17, 2014·5 cites·20 claims
- 0782US2025275484A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0881US8592945B2Large dimension device and method of manufacturing same in gate last processCHUANG HAK-LAY·Filed 2011·Granted Nov 26, 2013·5 cites·20 claims
- 0979US5958635ALithographic proximity correction through subset feature modificationMOTOROLA INC·Filed 1997·Granted Sep 28, 1999·62 cites·21 claims
- 1078US8698252B2Device for high-K and metal gate stacksCHEN PO-NIEN·Filed 2012·Granted Apr 15, 2014·5 cites·20 claims
- 1178US8691673B2Semiconductor structure with suppressed STI dishing effect at resistor regionCHUANG HAK-LAY·Filed 2011·Granted Apr 8, 2014·4 cites·18 claims
- 1274US9093559B2Method of hybrid high-k/metal-gate stack fabricationNG JIN-AUN·Filed 2012·Granted Jul 28, 2015·4 cites·20 claims
- 1374US6028003AMethod of forming an interconnect structure with a graded composition using a nitrided targetMOTOROLA INC·Filed 1997·Granted Feb 22, 2000·47 cites·21 claims
- 1472US9209089B2Method of fabricating a metal gate semiconductor deviceCHUNG SHENG-CHEN·Filed 2012·Granted Dec 8, 2015·3 cites·19 claims
- 1571US9177870B2Enhanced gate replacement process for high-K metal gate technologyCHUANG HAK-LAY·Filed 2011·Granted Nov 3, 2015·2 cites·20 claims
- 1670US5961791AProcess for fabricating a semiconductor deviceMOTOROLA INC·Filed 1997·Granted Oct 5, 1999·42 cites·40 claims
- 1762US8772114B2Metal gate semiconductor device and method of fabricating thereofCHUANG HAK-LAY·Filed 2012·Granted Jul 8, 2014·1 cites·20 claims
- 1861US9257347B2System and method for a field-effect transistor with a raised drain structureCHUANG HAK-LAY·Filed 2012·Granted Feb 9, 2016·1 cites·20 claims
- 1957US9123694B2N/P boundary effect reduction for metal gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·0 cites·19 claims
- 2054US9536867B2N/P boundary effect reduction for metal gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·0 cites·20 claims
- 2148US8635573B2Method of fabricating a semiconductor device having a defined minimum gate spacing between adjacent gate structuresCHUANG HAK-LAY·Filed 2011·Granted Jan 21, 2014·0 cites·18 claims
- 2228US9711415B2Device for high-K and metal gate stacksLIN JYUN-MING·Filed 2012·Granted Jul 18, 2017·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →