Inventor · disambiguated record
Hardayal Singh Gill
Also filed as: GILL HARDAYAL S · GILL HARDAYAL SINGH
313 granted patents·7 pending applications·7,747 citations·filing 1988–2014
99Inventor score
Files withIBM144HITACHI GLOBAL STORAGE TECH135HITACHI GLOBAL STORAGE TECH NL10GILL HARDAYAL SINGH9HEWLETT PACKARD CO7
Top patents by PatentIndex Score
320 records- 0198US8068317B2Magnetic tunnel transistor with high magnetocurrentGILL HARDAYAL SINGH·Filed 2008·Granted Nov 29, 2011·64 cites·20 claims
- 0298US7372674B2Magnetic tunnel transistor with high magnetocurrent and stronger pinningHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 13, 2008·61 cites·29 claims
- 0398US6275363B1Read head with dual tunnel junction sensorIBM·Filed 1999·Granted Aug 14, 2001·178 cites·57 claims
- 0497US7697242B2Method for providing a self-pinned differential GMR sensor having a bias structure comprising layers of ferromagnetic and non-magnetic material selected to provide a net-zero magnetic momentHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Apr 13, 2010·37 cites·5 claims
- 0597US7295401B2Laminated side shield for perpendicular write head for improved performanceHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Nov 13, 2007·76 cites·59 claims
- 0697US6452763B1GMR design with nano oxide layer in the second anti-parallel pinned layerIBM·Filed 2000·Granted Sep 17, 2002·88 cites·20 claims
- 0797US6097579ATunnel junction head structure without current shuntingIBM·Filed 1998·Granted Aug 1, 2000·164 cites·20 claims
- 0897US5701222ASpin valve sensor with antiparallel magnetization of pinned layersIBM·Filed 1995·Granted Dec 23, 1997·158 cites·10 claims
- 0997US5508866AMagnetoresistive sensor having exchange-coupled stabilization for transverse bias layerIBM·Filed 1994·Granted Apr 16, 1996·97 cites·25 claims
- 1097US5073836ASingle pole write and a differential magneto-resistive read for perpendicular recordingHEWLETT PACKARD CO·Filed 1989·Granted Dec 17, 1991·85 cites·19 claims
- 1196US7606007B2Shield stabilization for magnetoresistive sensorsHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 20, 2009·39 cites·20 claims
- 1296US6580589B1Pinned layer structure for a spin valve sensor having cobalt iron (CoFe) and cobalt iron oxide (CoFeO) laminated layersIBM·Filed 2000·Granted Jun 17, 2003·74 cites·25 claims
- 1396US6496335B2Magnetic head shield structure having high magnetic stabilityIBM·Filed 2000·Granted Dec 17, 2002·58 cites·23 claims
- 1496US6219212B1Magnetic tunnel junction head structure with insulating antiferromagnetic layerIBM·Filed 1998·Granted Apr 17, 2001·145 cites·35 claims
- 1596US6178074B1Double tunnel junction with magnetoresistance enhancement layerIBM·Filed 1998·Granted Jan 23, 2001·96 cites·65 claims
- 1696US6052263ALow moment/high coercivity pinned layer for magnetic tunnel junction sensorsIBM·Filed 1998·Granted Apr 18, 2000·147 cites·36 claims
- 1795US7746602B2Magnetic read head with reduced shuntingHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jun 29, 2010·23 cites·12 claims
- 1895US7616411B2Current perpendicular to plane (CPP) magnetoresistive sensor having a flux guide structure and synthetic free layerHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Nov 10, 2009·22 cites·24 claims
- 1995US7466524B2Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flipHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 16, 2008·20 cites·8 claims
- 2095US6407890B1Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layerIBM·Filed 2000·Granted Jun 18, 2002·54 cites·44 claims
- 2195US5920446AUltra high density GMR sensorIBM·Filed 1998·Granted Jul 6, 1999·102 cites·40 claims
- 2295US5751521ADifferential spin valve sensor structureIBM·Filed 1996·Granted May 12, 1998·101 cites·16 claims
- 2395US5515221AMagnetically stable shields for MR headIBM·Filed 1994·Granted May 7, 1996·76 cites·31 claims
- 2494US8270125B2Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layerGILL HARDAYAL SINGH·Filed 2007·Granted Sep 18, 2012·18 cites·10 claims
- 2594US7961440B2Current perpendicular to plane magnetoresistive sensor with reduced read gapHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Jun 14, 2011·27 cites·21 claims
- 2694US7342753B2In-stack biasing of the free layer of a magnetoresistive read elementHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Mar 11, 2008·19 cites·21 claims
- 2794US7313856B2Method of manufacturing a magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabsHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jan 1, 2008·15 cites·6 claims
- 2894US6570745B1Lead overlaid type of sensor with sensor passive regions pinnedIBM·Filed 2000·Granted May 27, 2003·42 cites·16 claims
- 2994US6456469B1Buffer layer of a spin valve structureIBM·Filed 2000·Granted Sep 24, 2002·46 cites·24 claims
- 3094US6219208B1Dual spin valve sensor with self-pinned layer specular reflectorIBM·Filed 1999·Granted Apr 17, 2001·69 cites·32 claims
- 3194US6181537B1Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layersIBM·Filed 1999·Granted Jan 30, 2001·84 cites·51 claims
- 3294US5748399AResettable symmetric spin valveIBM·Filed 1997·Granted May 5, 1998·93 cites·30 claims
- 3394US4881143ACompensated magneto-resistive read headHEWLETT PACKARD CO·Filed 1988·Granted Nov 14, 1989·60 cites·9 claims
- 3493US7881018B2Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noiseHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Feb 1, 2011·16 cites·20 claims
- 3593US6819530B2Current perpendicular to the planes (CPP) sensor with free layer stabilized by current fieldIBM·Filed 2002·Granted Nov 16, 2004·43 cites·21 claims
- 3693US6785102B2Spin valve sensor with dual self-pinned AP pinned layer structuresHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Aug 31, 2004·41 cites·8 claims
- 3793US6597546B2Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guideIBM·Filed 2001·Granted Jul 22, 2003·41 cites·30 claims
- 3893US6538859B1Giant magnetoresistive sensor with an AP-coupled low Hk free layerIBM·Filed 2000·Granted Mar 25, 2003·57 cites·44 claims
- 3993US5739988ASpin valve sensor with enhanced magnetoresistanceIBM·Filed 1996·Granted Apr 14, 1998·70 cites·22 claims
- 4092US9230576B1Scissor reader with side shield decoupled from bias materialHGST Netherlands BV·Filed 2014·Granted Jan 5, 2016·18 cites·8 claims
- 4192US7916435B1Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layerHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Mar 29, 2011·12 cites·14 claims
- 4292US7532442B2Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic materialHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 12, 2009·13 cites·32 claims
- 4392US7283333B2Self-pinned double tunnel junction headHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Oct 16, 2007·40 cites·20 claims
- 4492US7130167B2Magnetoresistive sensor having improved synthetic free layerHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Oct 31, 2006·58 cites·20 claims
- 4592US6693776B2Spin valve sensor with a spin filter and specular reflector layerHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Feb 17, 2004·35 cites·15 claims
- 4692US6674617B2Tunnel junction sensor with a multilayer free-layer structureIBM·Filed 2002·Granted Jan 6, 2004·53 cites·26 claims
- 4792US6633461B2Dual tunnel junction sensor antiferromagnetic layer between pinned layersHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Oct 14, 2003·37 cites·30 claims
- 4892US6501626B1Read head with a combined second read gap and pinning layer for a top spin valve sensorIBM·Filed 2000·Granted Dec 31, 2002·35 cites·82 claims
- 4992US6271997B1Read head spin valve sensor with triple antiparallel coupled free layer structureIBM·Filed 1999·Granted Aug 7, 2001·56 cites·33 claims
- 5092US6185079B1Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensorIBM·Filed 1998·Granted Feb 6, 2001·76 cites·37 claims
Showing the top 50 of 320 patent records by PatentIndex Score.
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