Inventor · disambiguated record
Harald Gossner
Also filed as: GOSSNER HARALD
89 granted patents·21 pending applications·737 citations·filing 1994–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AG43INTEL CORP25SHRIVASTAVA MAYANK10GOSSNER HARALD8INDIAN INST SCIENT5
Top patents by PatentIndex Score
110 records- 0196US8686510B2ESD protection element and ESD protection device for use in an electrical circuitINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 1, 2014·23 cites·18 claims
- 0295US8664720B2High voltage semiconductor devicesSHRIVASTAVA MAYANK·Filed 2010·Granted Mar 4, 2014·26 cites·44 claims
- 0395US7919816B2Electrostatic discharge protection elementINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 5, 2011·30 cites·4 claims
- 0494US7638370B2Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Dec 29, 2009·26 cites·16 claims
- 0594US6905892B2Operating method for a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 14, 2005·102 cites·11 claims
- 0693US8536648B2Drain extended field effect transistors and methods of formation thereofSHRIVASTAVA MAYANK·Filed 2011·Granted Sep 17, 2013·12 cites·33 claims
- 0793US7646046B2Field effect transistor with a fin structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 12, 2010·25 cites·30 claims
- 0892US7838948B2Fin interconnects for multigate FET circuit blocksINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 23, 2010·21 cites·5 claims
- 0991US6441437B1Integrated semiconductor circuit with protective structure for protection against electrostatic dischargeINFINEON TECHNOLOGIES AG·Filed 2000·Granted Aug 27, 2002·69 cites·20 claims
- 1089US8963201B2Tunable fin-SCR for robust ESD protectionSHRIVASTAVA MAYANK·Filed 2012·Granted Feb 24, 2015·10 cites·25 claims
- 1188US7838939B2ESD protection elementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 23, 2010·15 cites·43 claims
- 1287US8681461B2Selective current pumping to enhance low-voltage ESD clamping using high voltage devicesSHRIVASTAVA MAYANK·Filed 2012·Granted Mar 25, 2014·7 cites·24 claims
- 1387US7838940B2Drain-extended field effect transistorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 23, 2010·14 cites·23 claims
- 1486US8405121B2Semiconductor devicesGOSSNER HARALD·Filed 2009·Granted Mar 26, 2013·12 cites·27 claims
- 1585US11680895B2Device for detecting water on a surface and a method for detecting water on a surfaceFRAUNHOFER GES FORSCHUNG·Filed 2021·Granted Jun 20, 2023·2 cites·21 claims
- 1685US11355924B2Circuit for electrostatic discharge protection for wide frequency range multi-band interfacesINTEL IP CORP·Filed 2019·Granted Jun 7, 2022·6 cites·14 claims
- 1785US8455949B2ESD protection element and ESD protection device for use in an electrical circuitGOSSNER HARALD·Filed 2007·Granted Jun 4, 2013·12 cites·20 claims
- 1885US7821062B2Field effect transistor and method for producing a field effect transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 26, 2010·12 cites·21 claims
- 1983US8785968B2Silicon controlled rectifier (SCR) device for bulk FinFET technologySHRIVASTAVA MAYANK·Filed 2012·Granted Jul 22, 2014·7 cites·20 claims
- 2083US8629420B1Drain extended MOS device for bulk FinFET technologySHRIVASTAVA MAYANK·Filed 2012·Granted Jan 14, 2014·7 cites·19 claims
- 2183US7470957B2Electrostatic discharge protectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 30, 2008·10 cites·36 claims
- 2282US9608098B2Tunable FIN-SCR for robust ESD protectionINTEL DEUTSCHLAND GMBH·Filed 2015·Granted Mar 28, 2017·3 cites·26 claims
- 2382US8878234B2Semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2013·Granted Nov 4, 2014·5 cites·2 claims
- 2482US7450358B2ESD protective circuit for an electronic circuit having two or more supply voltagesINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 11, 2008·10 cites·19 claims
- 2582US7087938B2ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 8, 2006·10 cites·17 claims
- 2681US8455947B2Device and method for coupling first and second device portionsSHRIVASTAVA MAYANK·Filed 2009·Granted Jun 4, 2013·10 cites·21 claims
- 2780US9647069B2Drain extended field effect transistors and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 9, 2017·2 cites·23 claims
- 2879US11380806B2Variable capacitance device with multiple two-dimensional electron gas (2DEG) layersINTEL CORP·Filed 2017·Granted Jul 5, 2022·2 cites·13 claims
- 2979US9209143B2Die edge side connectionINTEL IP CORP·Filed 2013·Granted Dec 8, 2015·5 cites·24 claims
- 3079US8354710B2Field-effect device and manufacturing method thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 15, 2013·5 cites·33 claims
- 3179US7678632B2MuGFET with increased thermal massINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 16, 2010·7 cites·13 claims
- 3279US6194764B1Integrated semiconductor circuit with protection structure for protecting against electrostatic dischargeINFINEON TECHNOLOGIES AG·Filed 1998·Granted Feb 27, 2001·49 cites·20 claims
- 3378US8335064B2ESD clamp adjustmentSOLDNER WOLFGANG·Filed 2010·Granted Dec 18, 2012·6 cites·26 claims
- 3477US9577079B2Tunnel field effect transistorsGOSSNER HARALD·Filed 2009·Granted Feb 21, 2017·5 cites·38 claims
- 3576US11373995B2Group III-nitride antenna diodeINTEL CORP·Filed 2017·Granted Jun 28, 2022·2 cites·18 claims
- 3676US6320232B1Integrated semiconductor circuit with protective structure for protection against electrostatic dischargeINFINEON TECHNOLOGIES AG·Filed 1998·Granted Nov 20, 2001·39 cites·11 claims
- 3775US10319662B2Non-planar electrostatic discharge (ESD) protection devices with nano heat sinksINDIAN INST SCIENT·Filed 2018·Granted Jun 11, 2019·2 cites·23 claims
- 3875US8476711B2System for protection against electrostatic discharges in an electrical circuitGOSSNER HARALD·Filed 2008·Granted Jul 2, 2013·5 cites·22 claims
- 3970US8236624B2Method for producing a thyristorGOSSNER HARALD·Filed 2009·Granted Aug 7, 2012·2 cites·10 claims
- 4070US6930501B2Method for determining an ESD/latch-up strength of an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 16, 2005·18 cites·13 claims
- 4169US8072061B2Semiconductor device with cooling elementGOSSNER HARALD·Filed 2010·Granted Dec 6, 2011·2 cites·32 claims
- 4269US7694247B2Identification of ESD and latch-up weak points in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 6, 2010·6 cites·20 claims
- 4368US12034085B2Variable capacitance device with multiple two-dimensional electron gas (2DEG) layersINTEL CORP·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 4468US6590263B2ESD protection configuration for signal inputs and outputs in semiconductor devices with substrate isolationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 8, 2003·15 cites·5 claims
- 4567US9818672B2Flow diversion devicesINTEL IP CORP·Filed 2014·Granted Nov 14, 2017·2 cites·7 claims
- 4666US8450156B2Method for producing a thyristorGOSSNER HARALD·Filed 2012·Granted May 28, 2013·1 cites·10 claims
- 4766US5828076AMicroelectronic component and process for its productionSIEMENS AG·Filed 1995·Granted Oct 27, 1998·32 cites·5 claims
- 4863US8531807B2ESD clamp adjustmentINFINEON TECHNOLOGIES AG·Filed 2012·Granted Sep 10, 2013·1 cites·20 claims
- 4962US8643090B2Semiconductor devices and methods for manufacturing a semiconductor deviceSHRIVASTAVA MAYANK·Filed 2009·Granted Feb 4, 2014·2 cites·16 claims
- 5062US7729094B2ESD protection circuit and methodINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 1, 2010·2 cites·21 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →