Inventor · disambiguated record
Hannes Hecht
Also filed as: HECHT HANNES
2 granted patents·2 pending applications·2 citations·filing 2017–2022
34Inventor score
Technology areasH10P
Files withSILTRONIC AG4
Top patents by PatentIndex Score
4 records- 0163US11302565B2Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layerSILTRONIC AG·Filed 2017·Granted Apr 12, 2022·2 cites·12 claims
- 0243US12503791B2Method of producing epitaxial layer wafers in a chamber of a deposition reactorSILTRONIC AG·Filed 2022·Granted Dec 23, 2025·0 cites·6 claims
- 0336US2023287569A1Apparatus and method for depositing a layer of semiconductor material on a substrate waferSILTRONIC AG·Filed 2021·Application pending·0 cites
- 0431US2023178398A1Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor materialSILTRONIC AG·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →