Inventor · disambiguated record
Hajime Kamioka
Also filed as: KAMIOKA HAJIME · MIYAMOTO HIDEKAZU
12 granted patents·326 citations·filing 1974–1990
93Inventor score
Files withFUJITSU LTD12
Top patents by PatentIndex Score
12 records- 0191US4375993AMethod of producing a semiconductor device by simultaneous multiple laser annealingFUJITSU LTD·Filed 1981·Granted Mar 8, 1983·84 cites·22 claims
- 0283US4642883ASemiconductor bipolar integrated circuit device and method for fabrication thereofFUJITSU LTD·Filed 1985·Granted Feb 17, 1987·65 cites·3 claims
- 0382US4672740ABeam annealed silicide film on semiconductor substrateFUJITSU LTD·Filed 1984·Granted Jun 16, 1987·36 cites·24 claims
- 0480US3940288AMethod of making a semiconductor deviceFUJITSU LTD·Filed 1974·Granted Feb 24, 1976·30 cites·19 claims
- 0568US4293590AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1980·Granted Oct 6, 1981·23 cites·7 claims
- 0662US4275094AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1978·Granted Jun 23, 1981·14 cites·14 claims
- 0757US4503315ASemiconductor device with fuseFUJITSU LTD·Filed 1982·Granted Mar 5, 1985·19 cites·10 claims
- 0849US5011783AForming selective single crystal regions in insulated pockets formed on silicon by energy beams and devices formed in the pocketsFUJITSU LTD·Filed 1990·Granted Apr 30, 1991·21 cites·8 claims
- 0947US4293589AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1980·Granted Oct 6, 1981·10 cites·16 claims
- 1042US4412388AMethod for drying semiconductor substratesFUJITSU LTD·Filed 1980·Granted Nov 1, 1983·10 cites·11 claims
- 1141US4333774AMethod for producing walled emitter type bipolar transistorsFUJITSU LTD·Filed 1980·Granted Jun 8, 1982·10 cites·18 claims
- 1232US4210473AProcess for producing a semiconductor deviceFUJITSU LTD·Filed 1978·Granted Jul 1, 1980·4 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →