Inventor · disambiguated record
Haruhiko Koyama
Also filed as: KOYAMA HARUHIKO
22 granted patents·2 pending applications·192 citations·filing 1994–2016
94Inventor score
Top patents by PatentIndex Score
24 records- 0189US5555520ATrench capacitor cells for a dram having single monocrystalline capacitor electrodeTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·81 cites·17 claims
- 0288US7652319B2Semiconductor memory device including a stacked gate having a charge storage layer and a control gate, and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jan 26, 2010·16 cites·6 claims
- 0386US8294238B2Nonvolatile semiconductor memory device with reduced size of peripheral circuit areaKUTSUKAKE HIROYUKI·Filed 2010·Granted Oct 23, 2012·10 cites·5 claims
- 0483US7936093B2Phase control switching deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted May 3, 2011·7 cites·3 claims
- 0581US7616419B2Switchgear control apparatusMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Nov 10, 2009·11 cites·5 claims
- 0679US7787228B2Switchgear control apparatusMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 31, 2010·12 cites·3 claims
- 0778US8008810B2Phase-control switching apparatus and switching control method for phase-control switching apparatusMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 30, 2011·9 cites·9 claims
- 0876US7711502B2Power switching control apparatusMITSUBISHI ELECTRIC CORP·Filed 2006·Granted May 4, 2010·8 cites·7 claims
- 0969US7893517B2Semiconductor device with block layer and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Feb 22, 2011·4 cites·13 claims
- 1065US7741937B2Power switching apparatus and method of controlling the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 22, 2010·4 cites·2 claims
- 1163US9165732B2Gas circuit breakerOTANI HIROKAZU·Filed 2011·Granted Oct 20, 2015·2 cites·6 claims
- 1262US6897502B2Semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 2003·Granted May 24, 2005·8 cites·28 claims
- 1361US8189360B2Semiconductor memory deviceKOYAMA HARUHIKO·Filed 2010·Granted May 29, 2012·3 cites·17 claims
- 1460US8304910B2Semiconductor device and method of producing the sameKOYAMA HARUHIKO·Filed 2009·Granted Nov 6, 2012·1 cites·17 claims
- 1556US7585742B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2006·Granted Sep 8, 2009·4 cites·8 claims
- 1652US7952132B2Semiconductor memory device including a stacked gate having a charge storage layer and a control gate, and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted May 31, 2011·0 cites·8 claims
- 1749US5916733AMethod of fabricating a semiconductor deviceTOSHIBA KK·Filed 1996·Granted Jun 29, 1999·12 cites·18 claims
- 1841US8884353B2Semiconductor memory device including a stacked gate having a charge storage layer and a control gate, and method of manufacturing the sameTSURUMI DAISUKE·Filed 2011·Granted Nov 11, 2014·0 cites·9 claims
- 1939US7943478B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2009·Granted May 17, 2011·0 cites·9 claims
- 2038US9773859B2Non-volatile memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 26, 2017·0 cites·9 claims
- 2138US8502298B2Semiconductor device and method of manufacturing the sameKOYAMA HARUHIKO·Filed 2011·Granted Aug 6, 2013·0 cites·9 claims
- 2234US9065268B2Inrush-current suppressing device and inrush-current suppressing methodMORI TOMOHITO·Filed 2010·Granted Jun 23, 2015·0 cites·6 claims
- 2334US2016079340A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2434US2004164338A1Semiconductor device and method for fabricating the sameFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →