Inventor · disambiguated record
Hacène Lahreche
Also filed as: LAHRECHE HACENE
7 granted patents·4 pending applications·20 citations·filing 2003–2011
79Inventor score
Top patents by PatentIndex Score
11 records- 0168US7488385B2Method for epitaxial growth of a gallium nitride film separated from its substrateLUMILOG·Filed 2003·Granted Feb 10, 2009·13 cites·15 claims
- 0263US8253170B2Electronic devices with improved OHMIC contactLAHRECHE HACENE·Filed 2011·Granted Aug 28, 2012·2 cites·7 claims
- 0363US8093077B2Method for manufacturing a layer of gallium nitride or gallium and aluminum nitrideLAHRECHE HACENE·Filed 2009·Granted Jan 10, 2012·2 cites·14 claims
- 0460US7968390B2Electronic devices with improved ohmic contactSOITEC SILICON ON INSULATOR·Filed 2009·Granted Jun 28, 2011·2 cites·9 claims
- 0554US8198628B2Doped substrate to be heatedLANGER ROBERT·Filed 2008·Granted Jun 12, 2012·1 cites·25 claims
- 0647US8283673B2Method for manufacturing a layer of gallium nitride or gallium and aluminum nitrideLAHRECHE HACENE·Filed 2011·Granted Oct 9, 2012·0 cites·15 claims
- 0736US2005269671A1Support for hybrid epitaxy and method of fabricationFAURE BRUCE·Filed 2004·Application pending·0 cites
- 0835US8431964B2Electronic device with controlled electrical fieldLAHRECHE HACENE·Filed 2010·Granted Apr 30, 2013·0 cites·15 claims
- 0932US2010258898A1Process for fabricating an electronic deviceSOITEC SILICON ON INSULATOR·Filed 2010·Application pending·0 cites
- 1031US2006054926A1High electron mobility transistor piezoelectric structuresLAHRECHE HACENE·Filed 2004·Application pending·0 cites
- 1129US2007164299A1Hemt piezoelectric structures with zero alloy disorderLAHRECHE HACENE·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →