Inventor · disambiguated record
Hae Yong Lee
Also filed as: LEE HAE Y · LEE HAE YONG
9 granted patents·7 pending applications·52 citations·filing 2004–2024
84Inventor score
Files withLUMIGNTECH CO LTD6SAMSUNG CORNING CO LTD4EP KOREA CO LTD1LEE HAE YONG1MEGAGEN IMPLANT CO LTD1
Top patents by PatentIndex Score
16 records- 0187US7854316B2Dental implant packageMEGAGEN IMPLANT CO LTD·Filed 2006·Granted Dec 21, 2010·26 cites·15 claims
- 0283US7315045B2Sapphire/gallium nitride laminate having reduced bending deformationSAMSUNG CORNING CO LTD·Filed 2005·Granted Jan 1, 2008·11 cites·11 claims
- 0380US7621998B2Single crystalline gallium nitride thick film having reduced bending deformationSAMSUNG CORNING CO LTD·Filed 2005·Granted Nov 24, 2009·9 cites·8 claims
- 0470US7534008B2Backlight unit and light source for use in sameSAMSUNG CORNING PREC GLASS CO·Filed 2006·Granted May 19, 2009·5 cites·15 claims
- 0555US12366007B2Method of depositing Ga2O3 crystal film according to hydride vapor phase epitaxy by supplying GaCl gas, oxygen, and HCl gasLUMIGNTECH CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·6 claims
- 0654US11682301B2Automatic control system of smart bus platform considering the number of users and staying timeEP KOREA CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·11 claims
- 0754US2025040305A1Method for manufacturing separable semiconductor substrate, and semiconductor substrate, thin film device and composite device manufactured by the sameLUMIGNTECH CO LTD·Filed 2024·Application pending·0 cites
- 0853US8853064B2Method of manufacturing substrateLUMIGNTECH CO LTD·Filed 2012·Granted Oct 7, 2014·1 cites·3 claims
- 0950US7518151B2Gallium nitride/sapphire thin film having reduced bending deformationSAMSUNG CORNING CO LTD·Filed 2007·Granted Apr 14, 2009·0 cites·13 claims
- 1047US8729670B2Semiconductor substrate and method for manufacturing the sameLEE HAE YONG·Filed 2009·Granted May 20, 2014·0 cites·16 claims
- 1140US2005247260A1Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereofSHIN HYUNMIN·Filed 2005·Application pending·0 cites
- 1240US2006255339A1Single-crystalline gallium nitride substrateSAMSUNG CORNING CO LTD·Filed 2006·Application pending·0 cites
- 1339US2023175121A1Method for growing nitride filmLUMIGNTECH CO LTD·Filed 2021·Application pending·0 cites
- 1437US2005133798A1Nitride semiconductor template for light emitting diode and preparation thereofFiled 2004·Application pending·0 cites
- 1537US2022013357A1Method for manufacturing monocrystalline substrateLUMIGNTECH CO LTD·Filed 2021·Application pending·0 cites
- 1627US2011101307A1Substrate for semiconductor device and method for manufacturing the sameLUMIGNTECH CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →