Inventor · disambiguated record
Hai Li
Also filed as: LI HAI · LI HAI TING
14 granted patents·26 pending applications·3 citations·filing 2014–2024
83Inventor score
Files withINTEL CORP31SEMICONDUCTOR MFG INT SHANGHAI CORP7NIKONOV DMITRI EVGENIEVICH1UNIV CARNEGIE MELLON1
Top patents by PatentIndex Score
40 records- 0173US11011410B2Substrate having two semiconductor materials on insulatorSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted May 18, 2021·1 cites·17 claims
- 0270US9449950B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Sep 20, 2016·2 cites·11 claims
- 0365US12433172B2Spin-orbit readout using transition metal dichalcogenides and proximitized grapheneINTEL CORP·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 0462US11900979B2Probabilistic in-memory computingINTEL CORP·Filed 2021·Granted Feb 13, 2024·0 cites·26 claims
- 0560US12406713B2Probabilistic computing devices based on stochastic switching in a ferroelectric field-effect transistorINTEL CORP·Filed 2021·Granted Sep 2, 2025·0 cites·24 claims
- 0660US2025311310A1Planar ferroelectric majority gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 0759US12513911B2Ferroelectrically modulated spin orbit logic deviceINTEL CORP·Filed 2021·Granted Dec 30, 2025·0 cites·24 claims
- 0858US12457910B2Magnetoelectric spin-orbit device with in-plane and perpendicular magnetic layers and method of manufacturing sameINTEL CORP·Filed 2022·Granted Oct 28, 2025·0 cites·25 claims
- 0957US12056596B2Staged oscillators for neural computingINTEL CORP·Filed 2020·Granted Aug 6, 2024·0 cites·20 claims
- 1057US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 1156US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 1256US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 1356US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 1454US2025173124A1Generalized distribution true random number generator (trng) with autonomously learning probabilistic circuitsINTEL CORP·Filed 2023·Application pending·0 cites
- 1554US2024147867A1Magnetoelectric logic with magnetic tunnel junctionsINTEL CORP·Filed 2022·Application pending·0 cites
- 1653US2022115438A1Differential magnetoelectric spin orbit logicINTEL CORP·Filed 2020·Application pending·0 cites
- 1753US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1853US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1952US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2051US2024114692A1Inverted ferroelectric and antiferrolecetric capacitorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2151US2024206348A1Probabilistic and deterministic logic devices with reduced symmetry materialsINTEL CORP·Filed 2022·Application pending·0 cites
- 2251US2023352584A1Technologies for transistors with a ferroelectric gate dielectricNIKONOV DMITRI EVGENIEVICH·Filed 2022·Application pending·0 cites
- 2351US2024224814A1Chiral coupling-based valleytronic magnetoelectric spin-orbit devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 2451US2023200079A1Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitorsINTEL CORP·Filed 2021·Application pending·0 cites
- 2550US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 2649US10262891B2Substrate having two semiconductor materials on insulatorSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Apr 16, 2019·0 cites·20 claims
- 2749US2023317729A1Vertical bit data paths for integrated circuitsINTEL CORP·Filed 2022·Application pending·0 cites
- 2849US2023413684A1Valleytronic logic devices comprising monochalcogenidesINTEL CORP·Filed 2022·Application pending·0 cites
- 2948US10433435B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Oct 1, 2019·0 cites·11 claims
- 3048US2023068950A1Leakage insensitive transistor circuitsINTEL CORP·Filed 2021·Application pending·0 cites
- 3148US2023284457A1Interconnects with spintronic logic devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3248US2025219581A1Oscillator array coupling through ferroelectric capacitorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3347US2023189659A1Synthetic antiferromagnet-based probabilistic computing devicesINTEL CORP·Filed 2021·Application pending·0 cites
- 3447US2023100649A1Magnetoelectric logic with magnetic tunnel junctionsINTEL CORP·Filed 2021·Application pending·0 cites
- 3546US2023086080A1Magnetoelectric spin-orbit logic device with a topological insulator superlatticeINTEL CORP·Filed 2021·Application pending·0 cites
- 3645US10347530B2Method of forming interconnect structure with partial copper platingSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Jul 9, 2019·0 cites·14 claims
- 3745US2023070486A1Technologies for magnetic-tunnel-junction-based random number generationINTEL CORP·Filed 2021·Application pending·0 cites
- 3842US10049694B2Heat-assisted magnetic recording head having a non-uniform air-bearing surfaceUNIV CARNEGIE MELLON·Filed 2017·Granted Aug 14, 2018·0 cites·23 claims
- 3941US10199478B2Transistor and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 5, 2019·0 cites·20 claims
- 4036US10804224B2Semiconductor structures with improved bonding and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Oct 13, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →