Inventor · disambiguated record
Hang M. Liaw
Also filed as: LIAW HANG M · LIAW HANG MING
13 granted patents·1,226 citations·filing 1985–1998
95Inventor score
Files withMOTOROLA INC13
Top patents by PatentIndex Score
13 records- 0197US4963506ASelective deposition of amorphous and polycrystalline siliconMOTOROLA INC·Filed 1989·Granted Oct 16, 1990·363 cites·20 claims
- 0297US4663831AMethod of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layersMOTOROLA INC·Filed 1985·Granted May 12, 1987·154 cites·9 claims
- 0391US5891769AMethod for forming a semiconductor device having a heteroepitaxial layerMOTOROLA INC·Filed 1998·Granted Apr 6, 1999·315 cites·38 claims
- 0486US5520785AMethod for enhancing aluminum nitrideMOTOROLA INC·Filed 1994·Granted May 28, 1996·65 cites·18 claims
- 0584US5080933ASelective deposition of polycrystalline siliconMOTOROLA INC·Filed 1990·Granted Jan 14, 1992·58 cites·21 claims
- 0683US4849371AMonocrystalline semiconductor buried layers for electrical contacts to semiconductor devicesMOTOROLA INC·Filed 1988·Granted Jul 18, 1989·65 cites·10 claims
- 0779US4786615AMethod for improved surface planarity in selective epitaxial siliconMOTOROLA INC·Filed 1987·Granted Nov 22, 1988·64 cites·5 claims
- 0874US5272096AMethod for making a bipolar transistor having a silicon carbide layerMOTOROLA INC·Filed 1992·Granted Dec 21, 1993·35 cites·27 claims
- 0968US4818323AMethod of making a void free wafer via vacuum laminationMOTOROLA INC·Filed 1987·Granted Apr 4, 1989·35 cites·12 claims
- 1065US5108946AMethod of forming planar isolation regionsMOTOROLA INC·Filed 1990·Granted Apr 28, 1992·35 cites·21 claims
- 1155US5275971AMethod of forming an ohmic contact to III-V semiconductor materialsMOTOROLA INC·Filed 1992·Granted Jan 4, 1994·14 cites·22 claims
- 1247US5430327AOhmic contact for III-V semiconductor materialsMOTOROLA INC·Filed 1993·Granted Jul 4, 1995·9 cites·3 claims
- 1343US5141887ALow voltage, deep junction device and methodMOTOROLA INC·Filed 1991·Granted Aug 25, 1992·14 cites·36 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →