Inventor · disambiguated record

Han-Yu Lin

Also filed as: LIN HAN · LIN HAN-YU

35 granted patents·22 pending applications·22 citations·filing 2012–2025

95Inventor score

Technology areasH10P H10D H10W B01D G01N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD56 TU JUAN1

Top patents by PatentIndex Score

57 records

0194US9627258B1Method of forming a contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·9 cites·20 claims
0290US12336235B2Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·1 cites·14 claims
0390US11855192B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
0489US12033863B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·1 cites·20 claims
0589US2025331214A1Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0688US11646234B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
0787US12389619B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
0887US12021125B2High selectivity etching with germanium-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·1 cites·20 claims
0986US12136570B2Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
1085US2025366005A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1183US11973129B2Semiconductor device structure with inner spacer layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
1283US10950434B2Methods of reducing gate spacer loss during semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·6 claims
1382US12224210B2Method for FinFet fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
1481US2025366119A1Dry Etching Of Semiconductor Structures With Fluorine-Containing GasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1580US12288722B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
1680US10032887B2Method of forming a contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 24, 2018·2 cites·20 claims
1780US2025089331A1Method for semiconductor device structure cross reference to related applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1880US2025105019A1Semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1978US2025185346A1Method For FinFET Fabrication And Structure ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2078US2024347345A1Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2178US2024194480A1Methods of Reducing Gate Spacer Loss During Semiconductor ManufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2278US2025364477A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2378US2025261436A1Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2477US12336252B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
2577US11605728B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
2677US2025343089A1Heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2775US12198939B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
2875US2024395901A1Semiconductor device, and method for protecting low-k dielectric feature of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2974US12154970B2Method for semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
3074US11222794B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·1 cites·20 claims
3174US2025275195A1Manufacturing method of semiconductor device having isolation structure formed of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3274US2024097011A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3373US2024395627A1Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3473US2024363756A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3573US2024387645A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3672US11830928B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
3771US11908685B2Methods of reducing gate spacer loss during semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
3871US11373878B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·0 cites·20 claims
3970US12136660B2Semiconductor device, and method for protecting low-k dielectric feature of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
4070US11545397B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
4169US12471344B2Dry etching of semiconductor structures with fluorine-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
4269US2024363421A1Semiconductor Devices With A Rare Earth Metal Oxide LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4368US12315863B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
4468US12046676B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
4568US2024274485A1Heat dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4666US11417751B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
4765US11152491B2Method for forming semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
4865US2023317674A1Semiconductor device and method having high-kappa bonding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4964US12062576B2Semiconductor devices with a rare earth metal oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
5064US11107904B2Inner spacer formation in multi-gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims

Showing the top 50 of 57 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →