Inventor · disambiguated record
Hai Lu
Also filed as: LU HAI · Lu Hai Tao
9 granted patents·3 pending applications·1 citations·filing 2018–2025
73Inventor score
Top patents by PatentIndex Score
12 records- 0186US12146908B1In-situ testing system for semiconductor device in aerospace irradiation environmentNANJING UNIVERSITY·Filed 2024·Granted Nov 19, 2024·1 cites·8 claims
- 0262US12455391B2Reset-type charge-sensitive amplifying circuit, and method for amplifying and resetting data signalNANJING UNIVERSITY·Filed 2025·Granted Oct 28, 2025·0 cites·15 claims
- 0362US12115541B2Water-saving dynamic water outlet deviceXIAMEN EASO CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·10 claims
- 0460US12295154B1Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereofNANJING UNIVERSITY·Filed 2024·Granted May 6, 2025·0 cites·7 claims
- 0559US12080821B2Silicon carbide-based lateral PN junction extreme ultraviolet detector based on selective-area ion implantation, and preparation method thereofNANJING UNIVERSITY·Filed 2024·Granted Sep 3, 2024·0 cites·10 claims
- 0658US12287360B1GaN HEMT device for irradiation damage detection and detection and manufacturing method thereforNANJING UNIVERSITY·Filed 2024·Granted Apr 29, 2025·0 cites·6 claims
- 0757US12300746B2GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereofNANJING UNIVERSITY·Filed 2024·Granted May 13, 2025·0 cites·3 claims
- 0855US12392816B1Pulse laser irradiation wide bandgap power deviceNANJING UNIVERSITY·Filed 2024·Granted Aug 19, 2025·0 cites·5 claims
- 0955US2025169162A1IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION CAPABILITY AND FABRICATING METHOD THEREOFNANJING UNIVERSITY·Filed 2024·Application pending·0 cites
- 1052US12097513B2Energy saving dynamic effluent sprinklerXIAMEN EASO CO LTD·Filed 2021·Granted Sep 24, 2024·0 cites·5 claims
- 1150US2022268374A1Humanized heavy hammer structureXIAMEN EASO CO LTD·Filed 2021·Application pending·0 cites
- 1242US2020181799A1Method for Preparing GaN Substrate MaterialNANJING UNIVERSITY OF TECHNOLOGY·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →