Inventor · disambiguated record
Hajime Nago
Also filed as: NAGO HAJIME
59 granted patents·17 pending applications·93 citations·filing 2006–2025
98Inventor score
Top patents by PatentIndex Score
76 records- 0195US8648381B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Feb 11, 2014·10 cites·17 claims
- 0294US9590141B2Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurityTOSHIBA KK·Filed 2015·Granted Mar 7, 2017·7 cites·16 claims
- 0392US8525203B2Semiconductor light emitting deviceTACHIBANA KOICHI·Filed 2010·Granted Sep 3, 2013·8 cites·58 claims
- 0489US8455917B2Nitride semiconductor light emitting deviceNAGO HAJIME·Filed 2011·Granted Jun 4, 2013·9 cites·8 claims
- 0588US8564006B2Nitride semiconductor device and nitride semiconductor layer growth substrateTACHIBANA KOICHI·Filed 2012·Granted Oct 22, 2013·10 cites·20 claims
- 0687US11955520B2Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2021·Granted Apr 9, 2024·1 cites·20 claims
- 0785US9048362B2Semiconductor light emitting deviceKIMURA SHIGEYA·Filed 2012·Granted Jun 2, 2015·4 cites·14 claims
- 0884US8674338B2Semiconductor light emitting deviceTACHIBANA KOICHI·Filed 2010·Granted Mar 18, 2014·4 cites·21 claims
- 0984US7397069B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 8, 2008·6 cites·13 claims
- 1083US8680508B2Semiconductor light emitting device and method for manufacturing sameHIKOSAKA TOSHIKI·Filed 2011·Granted Mar 25, 2014·3 cites·20 claims
- 1182US8658450B2Crystal growth method and semiconductor light emitting deviceNAGO HAJIME·Filed 2010·Granted Feb 25, 2014·5 cites·22 claims
- 1276US9391145B2Nitride semiconductor element and nitride semiconductor waferTOSHIBA KK·Filed 2015·Granted Jul 12, 2016·2 cites·18 claims
- 1376US8815717B2Vapor deposition method and vapor deposition apparatusHARADA YOSHIYUKI·Filed 2010·Granted Aug 26, 2014·3 cites·16 claims
- 1476US7763907B2Semiconductor light emitting elementTOSHIBA KK·Filed 2007·Granted Jul 27, 2010·6 cites·16 claims
- 1573US11757006B2Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor deviceTOSHIBA KK·Filed 2022·Granted Sep 12, 2023·0 cites·12 claims
- 1673US9112111B2Semiconductor light emitting device and method for manufacturing semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Aug 18, 2015·2 cites·15 claims
- 1773US8895956B2Semiconductor light emitting deviceKIMURA SHIGEYA·Filed 2011·Granted Nov 25, 2014·2 cites·20 claims
- 1873US2024096969A1Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2023·Application pending·0 cites
- 1971US7683390B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Mar 23, 2010·2 cites·13 claims
- 2070US12266698B2Nitride semiconductor including multi-portion nitride regionTOSHIBA KK·Filed 2022·Granted Apr 1, 2025·0 cites·29 claims
- 2170US11072856B2Vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2019·Granted Jul 27, 2021·1 cites·8 claims
- 2270US2025203983A1Nitride semiconductor, including multi-portion nitride regionTOSHIBA KK·Filed 2025·Application pending·0 cites
- 2368US8729578B2Semiconductor light emitting device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted May 20, 2014·1 cites·20 claims
- 2466US9679974B2Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layerTOSHIBA KK·Filed 2014·Granted Jun 13, 2017·1 cites·29 claims
- 2566US9035336B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted May 19, 2015·0 cites·10 claims
- 2666US8623683B2Method of fabricating a nitride semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Jan 7, 2014·1 cites·7 claims
- 2766US8525195B2Semiconductor light emitting deviceNAGO HAJIME·Filed 2010·Granted Sep 3, 2013·1 cites·19 claims
- 2865US11469304B2Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor deviceTOSHIBA KK·Filed 2020·Granted Oct 11, 2022·0 cites·17 claims
- 2965US9263631B2Semiconductor light emitting device and method for manufacturing sameTOSHIBA KK·Filed 2014·Granted Feb 16, 2016·0 cites·19 claims
- 3065US8680548B2Semiconductor light emitting device and method of fabricating semiconductor light emitting deviceGOTODA TORU·Filed 2010·Granted Mar 25, 2014·2 cites·14 claims
- 3164US8835904B2Semiconductor light emitting device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Sep 16, 2014·0 cites·10 claims
- 3264US8741686B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jun 3, 2014·0 cites·5 claims
- 3363US8901595B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Dec 2, 2014·0 cites·17 claims
- 3462US12501637B2Nitride semiconductor and semiconductor deviceTOSHIBA KK·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 3562US12170318B2Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductorTOSHIBA KK·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 3661US12469698B2Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the waferTOSHIBA KK·Filed 2022·Granted Nov 11, 2025·0 cites·14 claims
- 3761US8952353B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted Feb 10, 2015·0 cites·6 claims
- 3861US8466477B2Semiconductor deviceTACHIBANA KOICHI·Filed 2012·Granted Jun 18, 2013·0 cites·15 claims
- 3961US7863637B2Semiconductor light emitting element, method for manufacturing the same, and light emitting deviceTOSHIBA KK·Filed 2008·Granted Jan 4, 2011·2 cites·9 claims
- 4061US2024395543A1Wafer and semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 4161US2025159959A1Nitride structure and semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 4260US9024293B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2014·Granted May 5, 2015·0 cites·19 claims
- 4360US8835950B2Semiconductor deviceTACHIBANA KOICHI·Filed 2012·Granted Sep 16, 2014·0 cites·10 claims
- 4460US2025176234A1Nitride structure and semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 4559US12477799B2Nitride semiconductor and semiconductor deviceTOSHIBA KK·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 4659US2021310118A1Vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 4758US8963176B2Semiconductor light-emitting device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Feb 24, 2015·0 cites·10 claims
- 4857US9263632B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2015·Granted Feb 16, 2016·0 cites·18 claims
- 4957US9093609B2Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurityTOSHIBA KK·Filed 2014·Granted Jul 28, 2015·0 cites·16 claims
- 5057US2024128325A1Semiconductor structure and semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →