Inventor · disambiguated record
Harsh Naik
Also filed as: NAIK HARSH
10 granted patents·4 pending applications·24 citations·filing 2011–2023
83Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG9BOBDE MADHUR2INFINEON TECHNOLOGIES AMERICAS CORP2ALPHA & OMEGA SEMICONDUCTOR1
Top patents by PatentIndex Score
14 records- 0191US8933506B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2011·Granted Jan 13, 2015·15 cites·9 claims
- 0289US9685523B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2014·Granted Jun 20, 2017·6 cites·8 claims
- 0374US9590096B2Vertical FET having reduced on-resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Mar 7, 2017·2 cites·20 claims
- 0472US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 0571US12159933B2Semiconductor device with semiconductor mesas between adjacent gate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 0666US12119400B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 15, 2024·0 cites·10 claims
- 0762US11777026B2Power semiconductor device having low-k dielectric gaps between adjacent metal contactsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 3, 2023·0 cites·17 claims
- 0859US11316043B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·14 claims
- 0959US10868173B2Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 15, 2020·0 cites·25 claims
- 1054US12191385B2Semiconductor device having a current spreading regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jan 7, 2025·0 cites·7 claims
- 1153US2024405120A1Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 1250US2024113115A1Trench gate nmos transistor and trench gate pmos transistor monolithically integrated in same semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 1349US2017288066A1Diode structures with controlled injection efficiency for fast switchingALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Application pending·0 cites
- 1432US2016172295A1Power FET Having Reduced Gate ResistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →