Inventor · disambiguated record
Hasan M. Nayfeh
Also filed as: NAYFEH HASAN M · NAYFEH HASAN MUNIR
12 granted patents·2 pending applications·104 citations·filing 2005–2014
88Inventor score
Top patents by PatentIndex Score
14 records- 0197US7151023B1Metal gate MOSFET by full semiconductor metal alloy conversionIBM·Filed 2005·Granted Dec 19, 2006·80 cites·14 claims
- 0283US8741725B2Butted SOI junction isolation structures and devices and method of fabricationJOHNSON JEFFREY B·Filed 2010·Granted Jun 3, 2014·6 cites·22 claims
- 0377US8482075B2Structure and method for manufacturing asymmetric devicesNAYFEH HASAN M·Filed 2012·Granted Jul 9, 2013·4 cites·6 claims
- 0477US8017483B2Method of creating asymmetric field-effect-transistorsIBM·Filed 2009·Granted Sep 13, 2011·5 cites·26 claims
- 0574US8642424B2Replacement metal gate structure and methods of manufactureJAIN SAMEER H·Filed 2011·Granted Feb 4, 2014·4 cites·22 claims
- 0667US8034692B2Structure and method for manufacturing asymmetric devicesIBM·Filed 2009·Granted Oct 11, 2011·2 cites·7 claims
- 0765US7659172B2Structure and method for reducing miller capacitance in field effect transistorsIBM·Filed 2005·Granted Feb 9, 2010·3 cites·4 claims
- 0853US9105718B2Butted SOI junction isolation structures and devices and method of fabricationIBM·Filed 2014·Granted Aug 11, 2015·0 cites·30 claims
- 0950US7491623B2Method of making a semiconductor structureIBM·Filed 2007·Granted Feb 17, 2009·0 cites·16 claims
- 1050US2007034967A1Metal gate mosfet by full semiconductor metal alloy conversionIBM·Filed 2006·Application pending·0 cites
- 1147US8232151B2Structure and method for manufacturing asymmetric devicesNAYFEH HASAN M·Filed 2011·Granted Jul 31, 2012·0 cites·11 claims
- 1246US8754446B2Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier materialCHEN XIAOMENG·Filed 2006·Granted Jun 17, 2014·0 cites·11 claims
- 1340US2008157200A1Stress liner surrounded facetless embedded stressor mosfetIBM·Filed 2006·Application pending·0 cites
- 1437US8084788B2Method of forming source and drain of a field-effect-transistor and structure thereofHOLT JUDSON ROBERT·Filed 2008·Granted Dec 27, 2011·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →