Inventor · disambiguated record
Hans B. Pogge
Also filed as: POGGE HANS B · POGGE HANS BERNHARD
7 granted patents·707 citations·filing 1977–1980
90Inventor score
Files withIBM7
Top patents by PatentIndex Score
7 records- 0196US4256514AMethod for forming a narrow dimensioned region on a bodyIBM·Filed 1978·Granted Mar 17, 1981·163 cites·19 claims
- 0296US4104086AMethod for forming isolated regions of silicon utilizing reactive ion etchingIBM·Filed 1977·Granted Aug 1, 1978·189 cites·21 claims
- 0395US4139442AReactive ion etching method for producing deep dielectric isolation in siliconIBM·Filed 1977·Granted Feb 13, 1979·142 cites·14 claims
- 0494US4104090ATotal dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidationIBM·Filed 1977·Granted Aug 1, 1978·93 cites·12 claims
- 0585US4264382AMethod for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regionsIBM·Filed 1979·Granted Apr 28, 1981·51 cites·11 claims
- 0677US4307180AProcess of forming recessed dielectric regions in a monocrystalline silicon substrateIBM·Filed 1980·Granted Dec 22, 1981·46 cites·9 claims
- 0766US4196440ALateral PNP or NPN with a high gainIBM·Filed 1978·Granted Apr 1, 1980·23 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →