Inventor · disambiguated record
Hans Reisinger
Also filed as: REISINGER HANS · REISINGER HANS-GEORG
43 granted patents·2 pending applications·1,176 citations·filing 1993–2022
98Inventor score
Top patents by PatentIndex Score
45 records- 0197US5994746AMemory cell configuration and method for its fabricationSIEMENS AG·Filed 1999·Granted Nov 30, 1999·191 cites·13 claims
- 0295US6137718AMethod for operating a non-volatile memory cell arrangementSIEMENS AG·Filed 1997·Granted Oct 24, 2000·138 cites·7 claims
- 0394US5959328AElectrically programmable memory cell arrangement and method for its manufactureSIEMENS AG·Filed 1997·Granted Sep 28, 1999·102 cites·11 claims
- 0491US6191459B1Electrically programmable memory cell array, using charge carrier traps and insulation trenchesINFINEON TECHNOLOGIES AG·Filed 1997·Granted Feb 20, 2001·103 cites·6 claims
- 0590US5262021AMethod of manufacturing a perforated workpieceSIEMENS AG·Filed 1993·Granted Nov 16, 1993·127 cites·16 claims
- 0689US6215140B1Electrically programmable non-volatile memory cell configurationSIEMENS AG·Filed 1999·Granted Apr 10, 2001·64 cites·29 claims
- 0787US6118159AElectrically programmable memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·66 cites·3 claims
- 0878US7049651B2Charge-trapping memory device including high permittivity stripsINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 23, 2006·20 cites·10 claims
- 0974US6995416B2Memory device for storing electrical charge and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 7, 2006·18 cites·43 claims
- 1074US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 1173US6558770B1Perforated work piece, and method for producing itINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 6, 2003·18 cites·9 claims
- 1272US6127220AManufacturing method for a capacitor in an integrated storage circuitSIEMENS AG·Filed 1999·Granted Oct 3, 2000·29 cites·10 claims
- 1371US12401153B2RF-connector systemROHDE & SCHWARZ·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 1471US6627940B1Memory cell arrangementINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 30, 2003·13 cites·6 claims
- 1570US6468348B1Method of producing an open formINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 22, 2002·7 cites·9 claims
- 1667US7402490B2Charge-trapping memory device and methods for operating and manufacturing the cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 22, 2008·3 cites·22 claims
- 1765US6365944B1Memory cell configuration and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 2, 2002·8 cites·8 claims
- 1864US6614575B1Optical structure and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 2, 2003·10 cites·6 claims
- 1964US6614066B2Ferroelectric transistor and memory cell configuration with the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·12 cites·8 claims
- 2061US5943571AMethod for manufacturing fine structuresSIEMENS AG·Filed 1997·Granted Aug 24, 1999·25 cites·5 claims
- 2160US6204119B1Manufacturing method for a capacitor in an integrated memory circuitSIEMENS AG·Filed 1999·Granted Mar 20, 2001·19 cites·10 claims
- 2259US6197666B1Method for the fabrication of a doped silicon layerSIEMENS AG·Filed 1999·Granted Mar 6, 2001·21 cites·12 claims
- 2358US6887437B1Reactor configuration and method for producing itINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 3, 2005·3 cites·8 claims
- 2458US6441424B1Integrated circuit configuration having at least one capacitor and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 1998·Granted Aug 27, 2002·15 cites·25 claims
- 2556US6117790AMethod for fabricating a capacitor for a semiconductor memory configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·16 cites·13 claims
- 2654US6022786AMethod for manufacturing a capacitor for a semiconductor arrangementSIEMENS AG·Filed 1998·Granted Feb 8, 2000·15 cites·13 claims
- 2754US5347696AMethod for manufacturing a multi-layer capacitorSIEMENS AG·Filed 1993·Granted Sep 20, 1994·15 cites·17 claims
- 2852US6518613B2Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 11, 2003·4 cites·6 claims
- 2952US6469887B2Capacitor for semiconductor configuration and method for fabricating a dielectric layer thereforINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 22, 2002·3 cites·8 claims
- 3052US6140177AProcess of forming a semiconductor capacitor including forming a hemispherical grain statistical mask with silicon and germaniumSIEMENS AG·Filed 1997·Granted Oct 31, 2000·13 cites·5 claims
- 3150US11940489B2Semiconductor device having an optical device degradation sensorINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 26, 2024·0 cites·21 claims
- 3250US5500385AMethod for manufacturing a silicon capacitor by thinningSIEMENS AG·Filed 1995·Granted Mar 19, 1996·15 cites·9 claims
- 3347US6445046B1Memory cell arrangement and process for manufacturing the sameSIEMENS AG·Filed 1997·Granted Sep 3, 2002·10 cites·6 claims
- 3444US6153475AMethod for the manufacturing a memory cell configurationSIEMENS AG·Filed 1997·Granted Nov 28, 2000·7 cites·7 claims
- 3542US6133126AMethod for fabricating a dopant regionSIEMENS AG·Filed 1999·Granted Oct 17, 2000·9 cites·8 claims
- 3641US6165835AMethod for producing a silicon capacitorSIEMENS AG·Filed 1998·Granted Dec 26, 2000·9 cites·22 claims
- 3739US6710388B2Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 23, 2004·2 cites·16 claims
- 3839US5882969AMethod for manufacturing an electrically writeable and erasable read-only memory cell arrangementSIEMENS AG·Filed 1997·Granted Mar 16, 1999·6 cites·5 claims
- 3938US6552385B2DRAM memory capacitor having three-layer dielectric, and method for its productionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 22, 2003·0 cites·6 claims
- 4038US6534362B2Method for fabricating a memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 18, 2003·0 cites·3 claims
- 4135US6548846B2Storage capacitor for a DRAMINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 15, 2003·0 cites·6 claims
- 4235US2003114018A1Method for fabricating a semiconductor componentFiled 2002·Application pending·0 cites
- 4334US2001020730A1Integrated circuit configuration, method for producing it, and wafer including integrated circuit configurationsFiled 2001·Application pending·0 cites
- 4433US6125050AConfiguration for driving parallel lines in a memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 26, 2000·3 cites·2 claims
- 4531US6194765B1Integrated electrical circuit having at least one memory cell and method for fabricating itSIEMENS AG·Filed 1999·Granted Feb 27, 2001·2 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →