Inventor · disambiguated record
Harpreet Sachar
Also filed as: SACHAR HARPREET · SACHAR HARPREET K · SACHAR HARPREET KAUR
19 granted patents·2 pending applications·94 citations·filing 2001–2010
93Inventor score
Top patents by PatentIndex Score
21 records- 0184US7202128B1Method of forming a memory device having improved erase speedADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 10, 2007·11 cites·20 claims
- 0280US7985687B1System and method for improving reliability in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 26, 2011·7 cites·18 claims
- 0378US6767791B1Structure and method for suppressing oxide encroachment in a floating gate memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 27, 2004·22 cites·14 claims
- 0476US8802537B1System and method for improving reliability in a semiconductor deviceWU YIDER·Filed 2005·Granted Aug 12, 2014·6 cites·12 claims
- 0575US7071538B1One stack with steam oxide for charge retentionSPANSION LLC·Filed 2004·Granted Jul 4, 2006·16 cites·18 claims
- 0673US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 0772US7307002B2Non-critical complementary masking method for poly-1 definition in flash memory device fabricationSPANSION LLC·Filed 2005·Granted Dec 11, 2007·4 cites·10 claims
- 0871US7675104B2Integrated circuit memory system employing silicon rich layersSPANSION LLC·Filed 2006·Granted Mar 9, 2010·3 cites·10 claims
- 0962US7863128B1Non-volatile memory device with improved erase speedSPANSION LLC·Filed 2005·Granted Jan 4, 2011·2 cites·8 claims
- 1062US7446369B2SONOS memory cell having high-K dielectricSPANSION LLC·Filed 2005·Granted Nov 4, 2008·2 cites·10 claims
- 1157US6566230B1Shallow trench isolation spacer for weff improvementADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·7 cites·10 claims
- 1252US6576487B1Method to distinguish an STI outer edge current component with an STI normal current componentADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 10, 2003·5 cites·12 claims
- 1351US7439141B2Shallow trench isolation approach for improved STI corner roundingSPANSION LLC·Filed 2002·Granted Oct 21, 2008·4 cites·8 claims
- 1450US7776688B2Use of a polymer spacer and Si trench in a bitline junction of a flash memory cell to improve TPD characteristicsSPANSION LLC·Filed 2007·Granted Aug 17, 2010·0 cites·20 claims
- 1547US7906807B2Use of a polymer spacer and Si trench in a bitline junction of a flash memory cell to improve TPD characteristicsSPANSION LLC·Filed 2010·Granted Mar 15, 2011·0 cites·20 claims
- 1646US7381620B1Oxygen elimination for device processingSPANSION LLC·Filed 2006·Granted Jun 3, 2008·0 cites·20 claims
- 1744US2008150011A1Integrated circuit system with memory systemSPANSION LLC·Filed 2007·Application pending·0 cites
- 1843US8642441B1Self-aligned STI with single poly for manufacturing a flash memory deviceTHURGATE TIM·Filed 2006·Granted Feb 4, 2014·0 cites·12 claims
- 1941US2008142874A1Integrated circuit system with implant oxideSPANSION LLC·Filed 2006·Application pending·0 cites
- 2040US8119477B2Memory system with protection layer to cover the memory gate stack and methods for forming sameSHIRAIWA HIDEHIKO·Filed 2006·Granted Feb 21, 2012·0 cites·20 claims
- 2136US6670691B1Shallow trench isolation fill processADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →