Inventor · disambiguated record
Hau-Tai Shieh
Also filed as: SHIEH HAU-TAI
76 granted patents·19 pending applications·103 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD75TAIWAN SEMICONDUCTOR MFG15CHEN YI-TZU2CHEN CHIEN-YUAN1LO BIN-HAU1
Top patents by PatentIndex Score
95 records- 0196US11423962B1Bit line pre-charge circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·3 cites·20 claims
- 0295US11057025B2Level shifterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 6, 2021·3 cites·20 claims
- 0393US11264081B1Memory circuit, electronic device having the memory circuit, and method of operating memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·4 cites·13 claims
- 0491US10651832B2Level shifterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·5 cites·20 claims
- 0590US12068018B2Power mode wake-up for memory on different power domainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·1 cites·20 claims
- 0688US10878934B2Memory device and electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·5 cites·20 claims
- 0786US11568121B2FinFET semiconductor device groupingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·1 cites·20 claims
- 0886US9654146B2Bi-directional parity bit generator circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·5 cites·18 claims
- 0986US2025292827A1Latch circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1085US11915743B2Latch circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·1 cites·21 claims
- 1185US10878890B1Operation assist circuit, memory device and operation assist methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·6 cites·18 claims
- 1284US2025329359A1Bit line pre-charge circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US2025308588A1Arrangements of memory devices and methods of operating the memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1483US12300605B2Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1583US11869623B2Latch type sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
- 1683US10950296B2Latch circuit formed from bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 1783US2025246544A1Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US9583181B1SRAM device capable of working in multiple low voltages without loss of performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·3 cites·17 claims
- 1982US2025201297A1Sub-Word Line Driver Placement For Memory DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2081US12254919B2Sub-word line driver placement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·19 claims
- 2181US10354719B23D structure for advanced SRAM design to avoid half-selected issueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 16, 2019·2 cites·20 claims
- 2281US9275721B2Split bit line architecture circuits and methods for memory devicesCHEN YI-TZU·Filed 2010·Granted Mar 1, 2016·9 cites·18 claims
- 2381US9001546B23D structure for advanced SRAM design to avoid half-selected issueTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·7 cites·20 claims
- 2481US2025316307A1Memory device and method for reducing active power consumption thereof using address controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2581US2025322868A1Memory device sense amplifier controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2680US9941287B2Three-dimensional static random access memory device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·2 cites·20 claims
- 2780US9208857B2SRAM multiplexing apparatusTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·6 cites·20 claims
- 2880US2025329402A1Latch type sense amplifier for testingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2979US12322438B2Latch circuit formed by modified memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 3079US11929109B2Sub-word line driver placement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 12, 2024·0 cites·20 claims
- 3178US11854970B2Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3277US12347483B2Arrangements of memory devices and methods of operating the memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 3377US12183428B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 3476US8866260B2MIM decoupling capacitors under a contact padSHIEH HAU-TAI·Filed 2009·Granted Oct 21, 2014·9 cites·20 claims
- 3576US2025157512A1Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3675US12249391B2Latch type sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 3775US2025252980A1Latch type sense amplifierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3873US12412605B2Bit line pre-charge circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 3973US11715505B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 4073US11670362B2Sub-word line driver placement for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 6, 2023·0 cites·20 claims
- 4173US11450605B2Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 4273US9558791B2Three-dimensional static random access memory device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·2 cites·16 claims
- 4373US2024371428A1Power mode wake-up for memory on different power domainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4472US12354647B2Memory device sense amplifier controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4572US9875789B23D structure for advanced SRAM design to avoid half-selected issueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 23, 2018·2 cites·20 claims
- 4671US11763873B2Power mode wake-up for memory on different power domainsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 4771US11444608B2Level shifterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·0 cites·20 claims
- 4871US11302701B2Three-dimensional static random access memory device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 4970US12400708B2Memory device and method for reducing active power consumption thereof using address controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 5070US10510401B2Semiconductor memory device using shared data line for read/write operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·20 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →