Inventor · disambiguated record
Hajun Sung
Also filed as: SUNG HAJUN
5 granted patents·15 pending applications·3 citations·filing 2021–2025
66Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20
Top patents by PatentIndex Score
20 records- 0192US12101942B2Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 24, 2024·1 cites·3 claims
- 0292US11818899B2Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·15 claims
- 0380US2025374556A1Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0478US2024414926A1Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0565US12471292B2Phase-change memory structure and phase-change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 0662US12254922B2Memory device including switching material and phase change materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·18 claims
- 0762US2025149084A1Memory device for implementing multi-level memory and method of implementing multi-level memory by using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0860US12426275B2Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·29 claims
- 0960US2024324246A1Self-selecting memory device having polarity dependent threshold voltage shift characteristics and memory apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1060US2025176193A1Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1157US2022406842A1Chalcogenide material, device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 1256US2025365983A1Self-selecting memory material, memory device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1356US2024057347A1Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1455US2025089270A1Memory device, manufacturing method thereof, and electronic apparatus including memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1555US2025194438A1Information reading method of self-selecting memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1654US2025133970A1Chalcogenide-based memory device for implementing multi-level memory and electronic apparatus including the chalcogenide-based memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1754US2025194443A1Memory device and method of implementing multi-level memory using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1851US2025380428A1Self-selecting memory material, device, and electronic device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1949US2024065118A1Phase change heterostructure, and phase change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2049US2025098558A1Chalcogenide-based memory material, and memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →