Inventor · disambiguated record
Hai-Dang Trinh
Also filed as: TRINH HAI-DANG
91 granted patents·28 pending applications·220 citations·filing 2012–2025
99Inventor score
Top patents by PatentIndex Score
119 records- 0199US10164182B1Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·36 cites·20 claims
- 0298US9954166B1Embedded memory device with a composite top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·29 cites·20 claims
- 0397US11018297B2Memory device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·3 cites·20 claims
- 0496US12127483B2Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 0596US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0696US11758830B2Memory device structure with protective elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
- 0796US11362271B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0896US10748798B1Wireless camera wafer for vacuum chamber diagnosticsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·15 cites·20 claims
- 0995US12132066B2Capping structure along image sensor element to mitigate damage to active layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·2 cites·20 claims
- 1095US11961545B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 1195US11545202B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
- 1295US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 1394US11856801B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1494US10910560B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·6 cites·20 claims
- 1594US10497867B1Multi-layer structure to increase crystalline temperature of a selector deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·11 cites·20 claims
- 1694US9647207B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 1794US2025366381A1Memory device structure with data storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1893US11404638B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 1993US10505107B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 2093US10176866B1Recap layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·15 cites·20 claims
- 2192US10811600B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 2292US10804464B2Method of forming memory device with diffusion barrier and capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 2392US10163949B2Image device having multi-layered refractive layer on back surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·6 cites·20 claims
- 2492US9978938B2Resistive RAM structure and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·9 cites·20 claims
- 2592US9627613B2Resistive random access memory (RRAM) cell with a composite capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·9 cites·17 claims
- 2691US12310036B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 2791US11527713B2Top electrode via with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·20 claims
- 2891US11479849B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 25, 2022·2 cites·20 claims
- 2990US11610927B2Capping structure along image sensor element to mitigate damage to active layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·2 cites·20 claims
- 3089US12424256B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3189US11309492B2Multi-layer structure to increase crystalline temperature of a selector deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 3288US12364171B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 3388US10164003B2MIM capacitor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 3488US2025311646A1Rram structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3587US12414484B2RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 3687US12408567B2Memory device structure with data storage elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 3787US12232336B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 3887US12069971B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 3987US10622555B2Film scheme to improve peeling in chalcogenide based PCRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·6 cites·20 claims
- 4086US12137572B2Ferroelectric memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 4186US11527717B2Resistive memory cell having a low forming voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 4286US2024387578A1Image sensor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4385US12075636B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 4485US11088239B2Cap structure for trench capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·3 cites·20 claims
- 4585US2025311645A1Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4685US2025048645A1Wakeup free approach to improve the ferroelectricity of feram using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4784US12102019B2Data storage structure for improving memory cell reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 4884US9728597B2Metal-insulator-metal structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·4 cites·20 claims
- 4984US2025294776A1FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAMETAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5083US12486566B2Physical vapor deposition chamber with target surface morphology monitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →