Inventor · disambiguated record
Han-Min Tsai
Also filed as: TSAI HAN-MIN
14 granted patents·17 citations·filing 2015–2023
88Inventor score
Top patents by PatentIndex Score
14 records- 0191US9780089B2Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·8 cites·20 claims
- 0288US10522535B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 0383US11063559B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 13, 2021·3 cites·23 claims
- 0478US12191811B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 0578US10991687B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 0674US11532614B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 0774US9484408B1Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 1, 2016·2 cites·20 claims
- 0873US11646312B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 0969US11791773B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1067US11094694B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 1159US10529711B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·0 cites·20 claims
- 1259US10522534B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 31, 2019·0 cites·20 claims
- 1355US9761584B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·19 claims
- 1450US11181778B2Display device comprising a dichroic reflection layer having a plurality of recessed portions disposed with a corresponding plurality of quantum dot blocksAU OPTRONICS CORP·Filed 2019·Granted Nov 23, 2021·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →