Inventor · disambiguated record
Haihong Wang
Also filed as: WANG HAIHONG
97 granted patents·3 pending applications·6,278 citations·filing 2000–2025
99Inventor score
Files withADVANCED MICRO DEVICES INC84RUBRIK INC4LIN MING-REN2NANJING BOE DISPLAY TECH CO LTD2WANG HAIHONG2
Top patents by PatentIndex Score
100 records- 0199US6921963B2Narrow fin FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 26, 2005·273 cites·10 claims
- 0299US6800910B2FinFET device incorporating strained silicon in the channel regionADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 5, 2004·295 cites·30 claims
- 0399US6764884B1Method for forming a gate in a FinFET device and thinning a fin in a channel region of the FinFET deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·244 cites·20 claims
- 0499US6706571B1Method for forming multiple structures in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·836 cites·19 claims
- 0599US6645797B1Method for forming fins in a FinFET device using sacrificial carbon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·273 cites·20 claims
- 0699US6611029B1Double gate semiconductor device having separate gatesADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 26, 2003·264 cites·15 claims
- 0798US6803631B2Strained channel finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·152 cites·30 claims
- 0898US6762448B1FinFET device with multiple fin structuresADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 13, 2004·168 cites·9 claims
- 0998US6709982B1Double spacer FinFET formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 23, 2004·272 cites·17 claims
- 1098US6703648B1Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·200 cites·9 claims
- 1198US6657276B1Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·198 cites·10 claims
- 1298US6657223B1Strained silicon MOSFET having silicon source/drain regions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·173 cites·11 claims
- 1397US6897527B2Strained channel FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted May 24, 2005·118 cites·28 claims
- 1497US6833588B2Semiconductor device having a U-shaped gate structureADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·116 cites·14 claims
- 1597US6716690B1Uniformly doped source/drain junction in a double-gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 6, 2004·137 cites·20 claims
- 1697US6686231B1Damascene gate process with sacrificial oxide in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 3, 2004·116 cites·20 claims
- 1797US6528858B1MOSFETs with differing gate dielectrics and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·162 cites·31 claims
- 1896US6787864B2Mosfets incorporating nickel germanosilicided gate and methods for their formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·126 cites·21 claims
- 1996US6787854B1Method for forming a fin in a finFET deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·113 cites·5 claims
- 2096US6762483B1Narrow fin FinFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 13, 2004·110 cites·14 claims
- 2196US6620671B1Method of fabricating transistor having a single crystalline gate conductorADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 16, 2003·135 cites·9 claims
- 2295US6787406B1Systems and methods for forming dense n-channel and p-channel fins using shadow implantingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·86 cites·15 claims
- 2394US7781810B1Germanium MOSFET devices and methods for making sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 24, 2010·24 cites·19 claims
- 2494US7250645B1Reversed T-shaped FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 31, 2007·74 cites·13 claims
- 2594US6902991B2Semiconductor device having a thick strained silicon layer and method of its formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 7, 2005·76 cites·23 claims
- 2694US6855607B2Multi-step chemical mechanical polishing of a gate area in a FinFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·70 cites·17 claims
- 2794US6630720B1Asymmetric semiconductor device having dual work function gate and method of fabricationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·75 cites·21 claims
- 2894US6586808B1Semiconductor device having multi-work function gate electrode and multi-segment gate dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 1, 2003·86 cites·9 claims
- 2993US6787439B2Method using planarizing gate material to improve gate critical dimension in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·67 cites·20 claims
- 3092US7148526B1Germanium MOSFET devices and methods for making sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 12, 2006·53 cites·6 claims
- 3191US6855989B1Damascene finfet gate with selective metal interdiffusionADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·54 cites·19 claims
- 3291US6812119B1Narrow fins by oxidation in double-gate finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·57 cites·14 claims
- 3390US6974983B1Isolated FinFET P-channel/N-channel transistor pairADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 13, 2005·55 cites·17 claims
- 3489US6852600B1Strained silicon MOSFET having silicon source/drain regions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 8, 2005·39 cites·20 claims
- 3588US7541267B1Reversed T-shaped finfetADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 2, 2009·13 cites·8 claims
- 3688US6911697B1Semiconductor device having a thin fin and raised source/drain areasADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 28, 2005·42 cites·16 claims
- 3788US6756643B1Dual silicon layer for chemical mechanical polishing planarizationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 29, 2004·31 cites·7 claims
- 3887US7235436B1Method for doping structures in FinFET devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 26, 2007·38 cites·14 claims
- 3987US6657267B1Semiconductor device and fabrication technique using a high-K liner for spacer etch stopADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·41 cites·12 claims
- 4086US7256455B2Double gate semiconductor device having a metal gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 14, 2007·31 cites·16 claims
- 4186US7125776B2Multi-step chemical mechanical polishing of a gate area in a FinFETADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 24, 2006·9 cites·20 claims
- 4285US7029958B2Self aligned damascene gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·31 cites·17 claims
- 4385US6876042B1Additional gate control for a double-gate MOSFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 5, 2005·35 cites·13 claims
- 4485US6852576B2Method for forming structures in finfet devicesADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 8, 2005·28 cites·20 claims
- 4584US8334181B1Germanium MOSFET devices and methods for making sameAN JUDY XILIN·Filed 2010·Granted Dec 18, 2012·8 cites·20 claims
- 4684US7259425B2Tri-gate and gate around MOSFET devices and methods for making sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 21, 2007·30 cites·18 claims
- 4784US6894337B1System and method for forming stacked fin structure using metal-induced-crystallizationADVANCED MICRO DEVICES INC·Filed 2004·Granted May 17, 2005·28 cites·19 claims
- 4884US6730576B1Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted May 4, 2004·28 cites·20 claims
- 4983US7498225B1Systems and methods for forming multiple fin structures using metal-induced-crystallizationADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 3, 2009·8 cites·20 claims
- 5083US2025342087A1Adaptive throttling in a universal backup hostRUBRIK INC·Filed 2025·Application pending·0 cites
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →