Inventor · disambiguated record
Haohao Yang
Also filed as: YANG HAOHAO
26 granted patents·3 pending applications·38 citations·filing 2018–2024
94Inventor score
Files withYANGTZE MEMORY TECH CO LTD29
Top patents by PatentIndex Score
29 records- 0197US11963356B2Three-dimensional memory device without gate line slits and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0293US11257831B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 0392US10892280B2Inter-deck plug in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 12, 2021·3 cites·20 claims
- 0492US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 0592US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
- 0689US11251195B2Three-dimensional memory device without gate line slits and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 15, 2022·4 cites·20 claims
- 0786US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0883US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
- 0982US11114458B2Three-dimensional memory device with support structures in gate line slits and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 7, 2021·2 cites·20 claims
- 1082US10741578B2Inter-deck plug in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·19 claims
- 1181US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 1281US10714493B2Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 1379US12446217B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1479US11183512B2Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 23, 2021·2 cites·19 claims
- 1578US11094712B2Three-dimensional memory device with support structures in slit structures and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 1677US2023292511A1Three-dimensional memory device with support structures in gate line slits and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1776US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1873US11765897B2Three-dimensional memory device without gate line slits and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 19, 2023·0 cites·13 claims
- 1972US11737263B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·10 claims
- 2072US11716850B2Three-dimensional memory device with support structures in gate line slits and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 2169US12035523B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·7 claims
- 2263US11101276B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·18 claims
- 2362US2021118905A1Three-Dimensional Memory Devices and Fabricating Methods ThereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Application pending·0 cites
- 2461US11805643B2Method of fabrication thereof a multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 2556US10892274B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 12, 2021·0 cites·13 claims
- 2655US11502094B2Multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·13 claims
- 2749US11145667B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 2849US10665500B1Methods of semiconductor device fabricationYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted May 26, 2020·0 cites·20 claims
- 2944US11329061B2Method for improving channel hole uniformity of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 10, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →