Inventor · disambiguated record
Hae Chang Yang
Also filed as: YANG HAE C · YANG HAE CHANG
30 granted patents·4 pending applications·151 citations·filing 1996–2024
95Inventor score
Top patents by PatentIndex Score
34 records- 0196US11723206B2Semiconductor memory device and methods of manufacturing and operating the sameSK HYNIX INC·Filed 2022·Granted Aug 8, 2023·2 cites·11 claims
- 0296US11462566B2Semiconductor memory device and methods of manufacturing and operating the sameSK HYNIX INC·Filed 2021·Granted Oct 4, 2022·4 cites·7 claims
- 0387US11482290B2Controller and memory system including the controllerSK HYNIX INC·Filed 2021·Granted Oct 25, 2022·2 cites·24 claims
- 0484US5811324AMethod for manufacturing thin film transistorLG SEMICON CO LTD·Filed 1997·Granted Sep 22, 1998·54 cites·9 claims
- 0580US11309436B2Semiconductor memory deviceSK HYNIX INC·Filed 2020·Granted Apr 19, 2022·1 cites·19 claims
- 0679US11943930B2Semiconductor memory device and methods of manufacturing and operating the sameSK HYNIX INC·Filed 2023·Granted Mar 26, 2024·0 cites·2 claims
- 0779US11749351B2Memory controller and method of operating the memory controllerSK HYNIX INC·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 0875US12342545B2Switching elementSK HYNIX INC·Filed 2024·Granted Jun 24, 2025·0 cites·7 claims
- 0969US11818892B2Semiconductor device and manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2022·Granted Nov 14, 2023·0 cites·10 claims
- 1065US11985829B2Switching element, semiconductor memory device including switching element, and method for fabricating the semiconductor memory deviceSK HYNIX INC·Filed 2021·Granted May 14, 2024·0 cites·19 claims
- 1165US11411017B2Semiconductor device and manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 1264US12477729B2CMOS device, method of manufacturing CMOS device, and semiconductor memory device including CMOS deviceSK HYNIX INC·Filed 2023·Granted Nov 18, 2025·0 cites·22 claims
- 1361US6033941AMethod of forming a thin film transistor with asymmetrically arranged gate electrode and offset regionLG SEMICON CO LTD·Filed 1999·Granted Mar 7, 2000·17 cites·8 claims
- 1460US2024237342A1Semiconductor memory device and method of manufacturing the semiconductor memory deviceSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1559US12462879B2Memory device and operating method of the memory deviceSK HYNIX INC·Filed 2023·Granted Nov 4, 2025·0 cites·22 claims
- 1659US12386520B2Semiconductor memory device and operating method of the semiconductor memory deviceSK HYNIX INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 1758US11798624B2Semiconductor memory and operating method thereofSK HYNIX INC·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 1856US11914885B2Memory controller and operating method thereofSK HYNIX INC·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1953US5925894AThin film transistor with asymmetrically arranged gate electrode and offset regionLG SEMICON CO LTD·Filed 1997·Granted Jul 20, 1999·12 cites·18 claims
- 2051US11581050B2Memory device and method of operating the memory deviceSK HYNIX INC·Filed 2021·Granted Feb 14, 2023·0 cites·20 claims
- 2150US2022328514A1Semiconductor memory device and method of manufacturing the sameSK HYNIX INC·Filed 2021·Application pending·0 cites
- 2249US6011276AThin film transistor and fabrication method thereofLG SEMICON CO LTD·Filed 1997·Granted Jan 4, 2000·10 cites·19 claims
- 2349US5637884AThin film transistor having increased on currentLG SEMICON CO LTD·Filed 1996·Granted Jun 10, 1997·10 cites·7 claims
- 2445US11355207B2Memory device and method of operating the sameSK HYNIX INC·Filed 2020·Granted Jun 7, 2022·0 cites·18 claims
- 2544US6391725B1Semiconductor device and method for fabricating the sameLG SEMICON CO LTD·Filed 1999·Granted May 21, 2002·9 cites·5 claims
- 2643US5973362ASemiconductor device and method for fabricating the sameLG SEMICON CO LTD·Filed 1997·Granted Oct 26, 1999·9 cites·8 claims
- 2743US5841199AStructure of semiconductor deviceLG SEMICON CO LTD·Filed 1996·Granted Nov 24, 1998·9 cites·4 claims
- 2843US2008003787A1Method of manufacturing semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2935US6100121AMethod of fabricating a thin film transistor having a U-shaped gate electrodeLG SEMICON CO LTD·Filed 1999·Granted Aug 8, 2000·3 cites·17 claims
- 3033US6232195B1Structure of semiconductor deviceLG SEMICON CO LTD·Filed 1998·Granted May 15, 2001·3 cites·3 claims
- 3133US6023087AThin film transistor having an insulating membrane layer on a portion of its active layerLG SEMICON CO LTD·Filed 1998·Granted Feb 8, 2000·2 cites·13 claims
- 3233US2002145165A1Semiconductor device having electrostatic discharge protector and fabricating method thereofFiled 2001·Application pending·0 cites
- 3332US6727554B1ESD protection circuit and method for fabricating the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 27, 2004·2 cites·4 claims
- 3431US6100122AThin film transistor having an insulating membrane layer on a portion of its active layerLG SEMICON CO LTD·Filed 1999·Granted Aug 8, 2000·1 cites·15 claims
Join the waitlist — get patent alerts
Get an alert when Hae Chang Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →