Inventor · disambiguated record
Hee-Soon Chae
Also filed as: CHAE HEE-SOON
11 granted patents·1 pending application·184 citations·filing 2001–2010
91Inventor score
Top patents by PatentIndex Score
12 records- 0193US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0291US6936884B2Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memorySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 30, 2005·67 cites·32 claims
- 0382US6670670B2Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 30, 2003·28 cites·18 claims
- 0477US7208365B2Nonvolatile memory device and method of manufacturing the sameKWANG YOUL SEO·Filed 2006·Granted Apr 24, 2007·8 cites·25 claims
- 0577US6946346B2Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage elementSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·20 cites·30 claims
- 0674US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 0774US7202521B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·31 claims
- 0869US7349262B2Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·7 cites·11 claims
- 0960US7719871B2Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 1053US7112842B2Nonvolatile memory device and method of manufacturing the sameKWANG YOUL SEO·Filed 2004·Granted Sep 26, 2006·6 cites·8 claims
- 1151US6664123B2Method for etching metal layer on a scale of nanometersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 16, 2003·3 cites·9 claims
- 1238US2005173766A1Semiconductor memory and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →