Inventor · disambiguated record
Heon Yong Chang
Also filed as: CHANG HEON Y · CHANG HEON YONG
46 granted patents·30 pending applications·434 citations·filing 2004–2025
98Inventor score
Top patents by PatentIndex Score
76 records- 0198US7332370B2Method of manufacturing a phase change RAM device utilizing reduced phase change currentHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·167 cites·9 claims
- 0294US8013319B2Phase change memory device having a bent heater and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 6, 2011·28 cites·14 claims
- 0394US7858960B2Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devicesHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 28, 2010·24 cites·13 claims
- 0488US7262502B2Phase-change random access memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Aug 28, 2007·41 cites·19 claims
- 0587US8486752B2Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devicesCHANG HEON YONG·Filed 2010·Granted Jul 16, 2013·7 cites·10 claims
- 0686US7173271B2Phase-change memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 6, 2007·36 cites·4 claims
- 0785US8399285B2Phase change memory device having a bent heater and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Mar 19, 2013·8 cites·23 claims
- 0885US7910908B2Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·8 cites·7 claims
- 0982US7667219B2Reduced current phase-change memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 23, 2010·11 cites·8 claims
- 1079US8416616B2Phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Apr 9, 2013·4 cites·19 claims
- 1178US8236602B2Phase change memory device resistant to stack pattern collapse and a method for manufacturing the sameCHANG HEON YONG·Filed 2010·Granted Aug 7, 2012·3 cites·22 claims
- 1276US8422283B2Phase change memory device to prevent thermal cross-talk and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Apr 16, 2013·3 cites·8 claims
- 1376US8293650B2Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Oct 23, 2012·3 cites·15 claims
- 1474US7151300B2Phase-change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Dec 19, 2006·16 cites·3 claims
- 1573US7692957B2Phase change memory device with ensured sensing margin and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Apr 6, 2010·5 cites·15 claims
- 1669US7804086B2Phase change memory device having decreased contact resistance of heater and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 28, 2010·4 cites·39 claims
- 1769US7408181B2Phase-change memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Aug 5, 2008·10 cites·4 claims
- 1868US8049199B2Phase change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 1, 2011·6 cites·3 claims
- 1968US7799596B2Phase change memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 21, 2010·3 cites·2 claims
- 2067US8053750B2Phase change memory device having heat sinks formed under heaters and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 8, 2011·3 cites·16 claims
- 2167US7785923B2Phase change memory device preventing contact loss and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 31, 2010·6 cites·7 claims
- 2266US8216941B2Method for manufacturing phase change memory deviceCHANG HEON YONG·Filed 2008·Granted Jul 10, 2012·2 cites·14 claims
- 2364US8258002B2Phase change memory device resistant to stack pattern collapse and a method for manufacturing the sameCHANG HEON YONG·Filed 2010·Granted Sep 4, 2012·2 cites·17 claims
- 2464US8049198B2Phase change memory device to prevent thermal cross-talk and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 1, 2011·2 cites·8 claims
- 2564US7851776B2Phase change RAM deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 14, 2010·2 cites·4 claims
- 2664US7608850B2Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 27, 2009·2 cites·10 claims
- 2764US2025324617A1Semiconductor device and manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2864US2025351350A1Semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2964US2025267879A1Manufacturing method of memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3064US2025267900A1Semiconductor device including a transistor structure and a method of manufacturing the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3164US2025316590A1Semiconductor device including array of conductive linesSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3263US8071968B2Phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2009·Granted Dec 6, 2011·2 cites·20 claims
- 3363US7589342B2Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 15, 2009·7 cites·33 claims
- 3463US2025266377A1Semiconductor device and method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3563US2024381625A1Methods of manufacturing semiconductor deviceSK HYNIX INC·Filed 2023·Application pending·0 cites
- 3663US2025300110A1Semiconductor device and manufacturing method of semiconductor deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3762US7061005B2Phase-change random access memory device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jun 13, 2006·7 cites·7 claims
- 3861US12451444B2Semiconductor wafer including chip guardSK HYNIX INC·Filed 2022·Granted Oct 21, 2025·0 cites·25 claims
- 3961US7928422B2Phase change memory device capable of increasing sensing margin and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 19, 2011·1 cites·6 claims
- 4061US2025105175A1Semiconductor chip including chip guard structure and upper guard line disposed spaced apart from each otherSK HYNIX INC·Filed 2024·Application pending·0 cites
- 4161US2025118718A1Semiconductor device and manufacturing method thereofSK HYNIX INC·Filed 2024·Application pending·0 cites
- 4261US2025201772A1Semiconductor device and method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 4361US2025056791A1Semiconductor device including storage nodes and method of manufacturing the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 4458US7678642B2Method for manufacturing phase change memory device using a patterning processHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 16, 2010·5 cites·11 claims
- 4558US2024145399A1Semiconductor wafer including monitoring pattern structure with cover pattern layer and contact patterns disposed over monitoring pattern structureSK HYNIX INC·Filed 2023·Application pending·0 cites
- 4657US2024128198A1Semiconductor wafer including alignment key pattern layer including contact pattern layer disposed thereonSK HYNIX INC·Filed 2023·Application pending·0 cites
- 4756US7880159B2Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Feb 1, 2011·0 cites·2 claims
- 4855US7884344B2Phase change memory device resistant to stack pattern collapse and a method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Feb 8, 2011·0 cites·24 claims
- 4954US8093632B2Phase change memory device accounting for volume change of phase change material and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Granted Jan 10, 2012·2 cites·5 claims
- 5054US7553692B2Phase-change memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 30, 2009·0 cites·5 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →