Inventor · disambiguated record
Henry Chien
Also filed as: CHIEN HENRY · CHIEN HENRY H
84 granted patents·3 pending applications·3,322 citations·filing 1992–2016
99Inventor score
Files withSANDISK TECHNOLOGIES INC36SANDISK CORP21SANDISK 3D LLC6MONSANTO TECHNOLOGY LLC5MONSANTO CO4
Top patents by PatentIndex Score
87 records- 0199US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0299US9659956B1Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolationSANDISK TECHNOLOGIES INC·Filed 2016·Granted May 23, 2017·108 cites·13 claims
- 0399US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0499US9230987B2Multilevel memory stack structure and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 5, 2016·126 cites·38 claims
- 0599US9227456B2Memories with cylindrical read/write stacksSANDISK 3D LLC·Filed 2013·Granted Jan 5, 2016·188 cites·14 claims
- 0699US9230974B1Methods of selective removal of blocking dielectric in NAND memory stringsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·56 cites·39 claims
- 0799US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 0899US8884357B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·106 cites·24 claims
- 0999US8187936B2Ultrahigh density vertical NAND memory device and method of making thereofALSMEIER JOHANN·Filed 2010·Granted May 29, 2012·304 cites·18 claims
- 1098US9853043B2Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill materialSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 26, 2017·49 cites·17 claims
- 1198US9530790B1Three-dimensional memory device containing CMOS devices over memory stack structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·159 cites·28 claims
- 1298US9524976B2Method of integrating select gate source and memory hole for three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·27 cites·32 claims
- 1398US9502471B1Multi tier three-dimensional memory devices including vertically shared bit linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 22, 2016·116 cites·26 claims
- 1498US9356031B2Three dimensional NAND string memory devices with voids enclosed between control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 31, 2016·61 cites·4 claims
- 1598US9252151B2Three dimensional NAND device with birds beak containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 2, 2016·60 cites·33 claims
- 1698US8928061B2Three dimensional NAND device with silicide containing floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 6, 2015·72 cites·11 claims
- 1798US8461641B2Ultrahigh density vertical NAND memory device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·42 cites·15 claims
- 1898US8330208B2Ultrahigh density monolithic three dimensional vertical NAND string memory device and method of making thereofALSMEIER JOHANN·Filed 2012·Granted Dec 11, 2012·46 cites·14 claims
- 1998US6898121B2Deep wordline trench to shield cross coupling between adjacent cells for scaled NANDSANDISK CORP·Filed 2003·Granted May 24, 2005·134 cites·25 claims
- 2097US9728546B23D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 8, 2017·45 cites·12 claims
- 2197US9620514B23D semicircular vertical NAND string with self aligned floating gate or charge trap cell memory cells and methods of fabricating and operating the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 11, 2017·34 cites·29 claims
- 2297US9165940B2Three dimensional NAND device with silicide containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·36 cites·20 claims
- 2397US8383479B2Integrated nanostructure-based non-volatile memory fabricationSANDISK TECHNOLOGIES INC·Filed 2010·Granted Feb 26, 2013·33 cites·47 claims
- 2497US6936887B2Non-volatile memory cells utilizing substrate trenchesSANDISK CORP·Filed 2001·Granted Aug 30, 2005·101 cites·30 claims
- 2596US9666590B2High stack 3D memory and method of makingSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 30, 2017·17 cites·19 claims
- 2696US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 2796US9520406B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 13, 2016·26 cites·11 claims
- 2896US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
- 2995US9672917B1Stacked vertical memory array architectures, systems and methodsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·23 cites·14 claims
- 3095US9583500B2Multilevel memory stack structure and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2015·Granted Feb 28, 2017·12 cites·16 claims
- 3195US9524779B2Three dimensional vertical NAND device with floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·21 cites·20 claims
- 3295US9515080B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 6, 2016·20 cites·22 claims
- 3395US8492224B2Metal control gate structures and air gap isolation in non-volatile memoryPURAYATH VINOD ROBERT·Filed 2011·Granted Jul 23, 2013·19 cites·15 claims
- 3495US7494870B2Methods of forming NAND memory with virtual channelSANDISK CORP·Filed 2007·Granted Feb 24, 2009·27 cites·19 claims
- 3595US5534456AMethod of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacersSANDISK CORP·Filed 1995·Granted Jul 9, 1996·171 cites·9 claims
- 3694US9870945B2Crystalline layer stack for forming conductive layers in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 16, 2018·18 cites·24 claims
- 3794US9449981B2Three dimensional NAND string memory devices and methods of fabrication thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Sep 20, 2016·16 cites·17 claims
- 3894US7795080B2Methods of forming integrated circuit devices using composite spacer structuresSANDISK CORP·Filed 2008·Granted Sep 14, 2010·37 cites·8 claims
- 3994US6894930B2Deep wordline trench to shield cross coupling between adjacent cells for scaled NANDSANDISK CORP·Filed 2002·Granted May 17, 2005·51 cites·32 claims
- 4093US9093480B2Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 28, 2015·16 cites·23 claims
- 4193US8987087B2Three dimensional NAND device with birds beak containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·14 cites·9 claims
- 4292US9698149B2Non-volatile memory with flat cell structures and air gap isolationSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·9 cites·20 claims
- 4392US7732275B2Methods of forming NAND flash memory with fixed chargeSANDISK CORP·Filed 2007·Granted Jun 8, 2010·17 cites·18 claims
- 4492US7615445B2Methods of reducing coupling between floating gates in nonvolatile memorySANDISK CORP·Filed 2006·Granted Nov 10, 2009·19 cites·11 claims
- 4592US7504686B2Self-aligned non-volatile memory cellSANDISK CORP·Filed 2006·Granted Mar 17, 2009·21 cites·9 claims
- 4692US7170786B2Deep wordline trench to shield cross coupling between adjacent cells for scaled NANDSANDISK CORP·Filed 2005·Granted Jan 30, 2007·29 cites·13 claims
- 4791US8105867B2Self-aligned three-dimensional non-volatile memory fabricationMATAMIS GEORGE·Filed 2009·Granted Jan 31, 2012·22 cites·21 claims
- 4890US9716101B2Forming 3D memory cells after word line replacementSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 25, 2017·8 cites·11 claims
- 4990US8895437B2Method for forming staircase word lines in a 3D non-volatile memory having vertical bit linesSANDISK 3D LLC·Filed 2013·Granted Nov 25, 2014·8 cites·14 claims
- 5090US8693233B2Re-writable resistance-switching memory with balanced series stackSCHEUERLEIN ROY E·Filed 2012·Granted Apr 8, 2014·13 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →