Inventor · disambiguated record
Herbert J. Gould
Also filed as: GOULD HERBERT J
13 granted patents·550 citations·filing 1978–1998
94Inventor score
Files withINT RECTIFIER CORP13
Top patents by PatentIndex Score
13 records- 0191US4206540ASchottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrierINT RECTIFIER CORP·Filed 1978·Granted Jun 10, 1980·47 cites·10 claims
- 0287US5661314APower transistor device having ultra deep increased concentrationINT RECTIFIER CORP·Filed 1994·Granted Aug 26, 1997·65 cites·31 claims
- 0383US5888891AProcess for manufacturing a schottky diode with enhanced barrier height and high thermal stabilityINT RECTIFIER CORP·Filed 1996·Granted Mar 30, 1999·59 cites·24 claims
- 0482US6008092AShort channel IGBT with improved forward voltage drop and improved switching power lossINT RECTIFIER CORP·Filed 1997·Granted Dec 28, 1999·71 cites·12 claims
- 0578US5047833ASolderable front metal contact for MOS devicesINT RECTIFIER CORP·Filed 1990·Granted Sep 10, 1991·61 cites·9 claims
- 0678US4408216ASchottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature rangeINT RECTIFIER CORP·Filed 1982·Granted Oct 4, 1983·30 cites·11 claims
- 0776US5451544AMethod of manufacturing a back contact for semiconductor dieINT RECTIFIER CORP·Filed 1993·Granted Sep 19, 1995·41 cites·19 claims
- 0876US4398344AMethod of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surfaceINT RECTIFIER CORP·Filed 1982·Granted Aug 16, 1983·27 cites·13 claims
- 0975US4899199ASchottky diode with titanium or like layer contacting the dielectric layerINT RECTIFIER CORP·Filed 1983·Granted Feb 6, 1990·39 cites·14 claims
- 1074US4925812APlatinum diffusion processINT RECTIFIER CORP·Filed 1989·Granted May 15, 1990·41 cites·25 claims
- 1167US6184564B1Schottky diode with adjusted barrier height and process for its manufactureINT RECTIFIER CORP·Filed 1998·Granted Feb 6, 2001·33 cites·7 claims
- 1256US5904510APower transistor device having ultra deep increased concentration regionINT RECTIFIER CORP·Filed 1997·Granted May 18, 1999·15 cites·19 claims
- 1355US4965173AMetallizing process and structure for semiconductor devicesINT RECTIFIER CORP·Filed 1988·Granted Oct 23, 1990·21 cites·48 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →