Inventor · disambiguated record
Hemanth Jagannathan
Also filed as: JAGANNATHAN HEMANTH · JAGANNATHAN HEMANTH N
227 granted patents·32 pending applications·1,201 citations·filing 2002–2024
99Inventor score
Files withIBM206JAGANNATHAN HEMANTH21BASKER VEERARAGHAVAN S4KANAKASABAPATHY SIVANANDA4KANAKASABAPATHY SIVANANDA K4
Top patents by PatentIndex Score
259 records- 0199US10229986B1Vertical transport field-effect transistor including dual layer top spacerIBM·Filed 2017·Granted Mar 12, 2019·35 cites·8 claims
- 0299US9318581B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Apr 19, 2016·82 cites·11 claims
- 0398US10002791B1Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETSIBM·Filed 2017·Granted Jun 19, 2018·20 cites·10 claims
- 0498US9960272B1Bottom contact resistance reduction on VFETIBM·Filed 2017·Granted May 1, 2018·27 cites·18 claims
- 0598US9761655B1Stacked planar capacitors with scaled EOTIBM·Filed 2016·Granted Sep 12, 2017·36 cites·20 claims
- 0698US9761722B1Isolation of bulk FET devices with embedded stressorsIBM·Filed 2016·Granted Sep 12, 2017·25 cites·18 claims
- 0798US9741812B1Dual metal interconnect structureIBM·Filed 2016·Granted Aug 22, 2017·28 cites·9 claims
- 0898US9653537B1Controlling threshold voltage in nanosheet transistorsIBM·Filed 2016·Granted May 16, 2017·29 cites·20 claims
- 0998US9589845B1Fin cut enabling single diffusion breaksIBM·Filed 2016·Granted Mar 7, 2017·42 cites·20 claims
- 1098US9490255B1Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustmentsIBM·Filed 2015·Granted Nov 8, 2016·25 cites·20 claims
- 1198US9397197B1Forming wrap-around silicide contact on finFETIBM·Filed 2015·Granted Jul 19, 2016·28 cites·9 claims
- 1298US7855105B1Planar and non-planar CMOS devices with multiple tuned threshold voltagesIBM·Filed 2009·Granted Dec 21, 2010·83 cites·14 claims
- 1397US11271106B2Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contactsIBM·Filed 2020·Granted Mar 8, 2022·4 cites·20 claims
- 1497US10319833B1Vertical transport field-effect transistor including air-gap top spacerIBM·Filed 2017·Granted Jun 11, 2019·15 cites·13 claims
- 1597US10276687B1Formation of self-aligned bottom spacer for vertical transistorsIBM·Filed 2017·Granted Apr 30, 2019·15 cites·18 claims
- 1697US9865730B1VTFET devices utilizing low temperature selective epitaxyIBM·Filed 2016·Granted Jan 9, 2018·19 cites·16 claims
- 1797US9865703B2High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) processIBM·Filed 2015·Granted Jan 9, 2018·19 cites·7 claims
- 1897US9773875B1Fabrication of silicon-germanium fin structure having silicon-rich outer surfaceIBM·Filed 2016·Granted Sep 26, 2017·21 cites·13 claims
- 1997US9741822B1Simplified gate stack process to improve dual channel CMOS performanceIBM·Filed 2016·Granted Aug 22, 2017·14 cites·13 claims
- 2097US9595449B1Silicon-germanium semiconductor devices and method of makingIBM·Filed 2015·Granted Mar 14, 2017·22 cites·20 claims
- 2196US10483361B1Wrap-around-contact structure for top source/drain in vertical FETsIBM·Filed 2018·Granted Nov 19, 2019·11 cites·15 claims
- 2296US10361129B1Self-aligned double patterning formed fincutIBM·Filed 2018·Granted Jul 23, 2019·14 cites·18 claims
- 2396US9583489B1Solid state diffusion doping for bulk finFET devicesIBM·Filed 2016·Granted Feb 28, 2017·17 cites·17 claims
- 2496US9515073B1III-V semiconductor CMOS FinFET deviceIBM·Filed 2016·Granted Dec 6, 2016·12 cites·17 claims
- 2596US9484439B1III-V fin on insulatorIBM·Filed 2015·Granted Nov 1, 2016·12 cites·12 claims
- 2695US9472407B2Replacement metal gate FinFETIBM·Filed 2015·Granted Oct 18, 2016·9 cites·4 claims
- 2795US9406679B2Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gateIBM·Filed 2015·Granted Aug 2, 2016·10 cites·9 claims
- 2895US6789426B2Microfluidic channels with integrated ultrasonic transducers for temperature measurement and methodUNIV LELAND STANFORD JUNIOR·Filed 2002·Granted Sep 14, 2004·83 cites·4 claims
- 2994US10546787B2Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS deviceIBM·Filed 2018·Granted Jan 28, 2020·6 cites·11 claims
- 3094US10096713B1FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formationIBM·Filed 2017·Granted Oct 9, 2018·7 cites·10 claims
- 3194US9356121B2Divot-free planarization dielectric layer for replacement gateIBM·Filed 2014·Granted May 31, 2016·14 cites·13 claims
- 3294US9330938B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2014·Granted May 3, 2016·12 cites·12 claims
- 3394US8309447B2Method for integrating multiple threshold voltage devices for CMOSCHENG KANGGUO·Filed 2010·Granted Nov 13, 2012·21 cites·27 claims
- 3493US10373912B2Replacement metal gate processes for vertical transport field-effect transistorIBM·Filed 2018·Granted Aug 6, 2019·10 cites·17 claims
- 3593US10236219B1VFET metal gate patterning for vertical transport field effect transistorIBM·Filed 2017·Granted Mar 19, 2019·7 cites·20 claims
- 3693US9627510B1Structure and method for replacement gate integration with self-aligned contactsIBM·Filed 2015·Granted Apr 18, 2017·8 cites·13 claims
- 3792US10615043B2Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor deviceIBM·Filed 2018·Granted Apr 7, 2020·4 cites·11 claims
- 3892US10529573B2Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor deviceIBM·Filed 2018·Granted Jan 7, 2020·4 cites·9 claims
- 3992US9006094B2Stratified gate dielectric stack for gate dielectric leakage reductionJAGANNATHAN HEMANTH·Filed 2012·Granted Apr 14, 2015·10 cites·15 claims
- 4092US8835237B2Robust replacement gate integrationIBM·Filed 2012·Granted Sep 16, 2014·12 cites·11 claims
- 4192US8486778B2Low resistance source and drain extensions for ETSOIHARAN BALASUBRAMANIAN S·Filed 2011·Granted Jul 16, 2013·13 cites·5 claims
- 4292US8421139B2Structure and method to integrate embedded DRAM with finfetKANAKASABAPATHY SIVANANDA·Filed 2010·Granted Apr 16, 2013·13 cites·12 claims
- 4392US8368146B2FinFET devicesIBM·Filed 2010·Granted Feb 5, 2013·12 cites·7 claims
- 4491US11251285B2Approach to control over-etching of bottom spacers in vertical fin field effect transistor devicesIBM·Filed 2019·Granted Feb 15, 2022·4 cites·20 claims
- 4591US10741663B1Encapsulation layer for vertical transport field-effect transistor gate stackIBM·Filed 2019·Granted Aug 11, 2020·6 cites·20 claims
- 4691US10680083B2Oxide isolated fin-type field-effect transistorsIBM·Filed 2018·Granted Jun 9, 2020·6 cites·10 claims
- 4791US10229856B2Dual channel CMOS having common gate stacksIBM·Filed 2017·Granted Mar 12, 2019·5 cites·7 claims
- 4891US8304836B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2009·Granted Nov 6, 2012·10 cites·18 claims
- 4990US10559671B2Vertical transport field-effect transistor including air-gap top spacerIBM·Filed 2019·Granted Feb 11, 2020·5 cites·7 claims
- 5090US10079233B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Sep 18, 2018·5 cites·16 claims
Showing the top 50 of 259 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hemanth Jagannathan files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →