Inventor · disambiguated record
Heung-Jin Joo
Also filed as: JOO HEUNG-JIN
16 granted patents·8 pending applications·87 citations·filing 2002–2019
92Inventor score
Top patents by PatentIndex Score
24 records- 0185US8598010B2Methods of forming variable-resistance memory devices and devices formed therebyJOO HEUNG JIN·Filed 2011·Granted Dec 3, 2013·10 cites·17 claims
- 0282US10937797B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·5 cites·21 claims
- 0380US10529736B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·4 cites·20 claims
- 0479US8071423B2Variable resistance memory devices and methods of forming variable resistance memory devicesJOO HEUNG JIN·Filed 2010·Granted Dec 6, 2011·6 cites·9 claims
- 0579US7348616B2Ferroelectric integrated circuit devices having an oxygen penetration pathSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·7 cites·16 claims
- 0676US7294876B2FeRAM device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 13, 2007·7 cites·20 claims
- 0774US6979881B2Ferroelectric integrated circuit devices having an oxygen penetration pathSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 27, 2005·16 cites·19 claims
- 0872US7586774B2Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 0970US7495311B2Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 24, 2009·3 cites·13 claims
- 1064US7262453B2Multiple stacked capacitors formed within an opening with thick capacitor dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 28, 2007·2 cites·17 claims
- 1161US10896917B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·0 cites·20 claims
- 1257US6911362B2Methods for forming electronic devices including capacitor structuresSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 28, 2005·6 cites·33 claims
- 1356US7052951B2Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·7 cites·28 claims
- 1455US7105418B2Multiple stacked capacitors formed within an opening with thick capacitor dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·5 cites·37 claims
- 1553US2007158731A1Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1646US7144772B2Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·4 cites·17 claims
- 1742US2008087926A1Ferroelectric random access memory and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1841US2008111171A1Node structures under capacitor in ferroelectric random access memory device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1941US2012228577A1Phase change memory device and method of manufacturing the samePARK KYUSUL·Filed 2012·Application pending·0 cites
- 2040US2010181549A1Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide LayersKIM SONG-YI·Filed 2010·Application pending·0 cites
- 2138US2008061334A1Semiconductor memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2233US2011188292A1Variable resistance memory, operating method and systemSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2328US8748884B2Variable resistance memory devices having reduced reset currentJEONG JI-HYUN·Filed 2011·Granted Jun 10, 2014·0 cites·19 claims
- 2427US2008067566A1Contact structure having conductive oxide layer, ferroelectric random access memory device employing the same and methods of fabricating the sameCHOI DO-YEON·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →