Inventor · disambiguated record
Hee-Soo Kang
Also filed as: KANG HEE SOO
44 granted patents·26 pending applications·389 citations·filing 2004–2024
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38HYUNDAI MOTOR CO LTD19KANG HEE-SOO3MAEDA SHIGENOBU3SUNG SUK-KANG2
Top patents by PatentIndex Score
70 records- 0198US8878309B1Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 4, 2014·105 cites·25 claims
- 0297US8836046B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2013·Granted Sep 16, 2014·19 cites·20 claims
- 0394US9379106B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 28, 2016·18 cites·22 claims
- 0493US7566619B2Methods of forming integrated circuit devices having field effect transistors of different types in different device regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·12 cites·13 claims
- 0592US9012281B2Semiconductor device fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 21, 2015·14 cites·4 claims
- 0692US8053347B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·25 cites·17 claims
- 0792US7358142B2Method for forming a FinFET by a damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·29 cites·5 claims
- 0891US7166514B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 23, 2007·15 cites·25 claims
- 0990US7056781B2Method of forming fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·51 cites·26 claims
- 1088US12336242B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1186US9299811B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·7 cites·12 claims
- 1286US7804137B2Field effect transistor (FET) devices and methods of manufacturing FET devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·12 cites·16 claims
- 1386US7528022B2Method of forming fin field effect transistor using damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 5, 2009·11 cites·11 claims
- 1485US10002943B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·4 cites·20 claims
- 1585US7329581B2Field effect transistor (FET) devices and methods of manufacturing FET devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 12, 2008·12 cites·36 claims
- 1683US10269928B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·8 claims
- 1781US9755074B2Semiconductor device including a multi-channel active patternSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 5, 2017·3 cites·16 claims
- 1881US7868467B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·8 cites·17 claims
- 1981US7560759B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·6 cites·19 claims
- 2077US10205023B2Semiconductor device including multi-channel active patternsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 12, 2019·2 cites·19 claims
- 2175US11955517B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·19 claims
- 2275US9419077B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Aug 16, 2016·1 cites·18 claims
- 2374US7834391B2Integrated circuit memory devices including memory cells on adjacent pedestals having different heights, and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 16, 2010·8 cites·32 claims
- 2474US2025192163A1Negative electrode containing crushed conductive additive for all-solid-state battery and a method of manufacturing the sameHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 2574US2025226385A1Electrode for an all-solid-state battery including two types of conductive materials and method of manufacturing sameHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 2673US2025192151A1Composite anode active material layer for all-solid-state-battery and manufacturing method the sameHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 2771US8426272B2Non-volatile memory devices including shared bit lines and methods of fabricating the sameYOON YOUNG-BAE·Filed 2012·Granted Apr 23, 2013·3 cites·15 claims
- 2870US2024213452A1Room-temperature operable all-solid-state batteryHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 2969US7978522B2Flash memory device including a dummy cellSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·6 cites·20 claims
- 3068US2024145728A1All-solid-state battery with minimal change in volumeHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 3168US2024079599A1Anodeless all-solid-state battery capable of achieving uniform deposition of lithiumHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 3267US10861934B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 3367US2025260016A1All solid-state-battery including anode having suppressed volume expansion in vertical and horizontal directions and manufacturing method thereofHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 3467US2024047685A1All solid state battery operable at room temperature and method of manufacturing sameHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 3566US10319814B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·17 claims
- 3666US2023327123A1Electrode slurry for all-solid-state batteries including cluster composite and method for manufacturing the sameHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 3766US2023369654A1All-solid-state battery having high capacity and excellent durability and method for manufacturing the sameHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 3866US2023207886A1All-solid-state battery with improved durabilityHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 3966US2023395786A1Anodeless all-solid-state batteryHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 4066US2023318076A1All-solid-state battery having high durability by improvement in thermal distribution and method for manufacturing the sameHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 4166US2023395806A1All-solid-state battery operable at room temperature and method of manufacturing sameHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 4266US2024079597A1All-solid-state battery including self-standing sheet layerHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 4365US7982246B2Selection transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 19, 2011·2 cites·8 claims
- 4465US7384850B2Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·5 cites·9 claims
- 4565US2023207772A1All-solid-state battery with improved interfacial propertiesHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 4664US9627483B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 4763US2024250269A1All-solid-state battery including a porous composite membraneHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 4861US2025226464A1Method of manufacturing all-solid-state battery including silicon-based anode active material, method of operating same, and method of testing sameHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 4960US2023178715A1Lithium secondary battery with high durability and manufacturing method thereofHYUNDAI MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 5059US8158480B2Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the sameKANG HEE-SOO·Filed 2008·Granted Apr 17, 2012·2 cites·10 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →