Inventor · disambiguated record
Helmut Klose
Also filed as: KLOSE HELMUT
32 granted patents·1 pending application·1,312 citations·filing 1991–2005
98Inventor score
Top patents by PatentIndex Score
33 records- 0199US5767001AProcess for producing semiconductor components between which contact is made verticallySIEMENS AG·Filed 1994·Granted Jun 16, 1998·508 cites·4 claims
- 0294US5760455AMicromechanical semiconductor component and manufacturing method thereforSIEMENS AG·Filed 1996·Granted Jun 2, 1998·90 cites·25 claims
- 0391US5447067AAcceleration sensor and method for manufacturing sameSIEMENS AG·Filed 1994·Granted Sep 5, 1995·75 cites·7 claims
- 0490US6172391B1DRAM cell arrangement and method for the manufacture thereofSIEMENS AG·Filed 1998·Granted Jan 9, 2001·122 cites·11 claims
- 0588US6593612B2Structure and method for forming a body contact for vertical transistor cellsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 15, 2003·37 cites·4 claims
- 0683US5373181ASensor for sensing fingerpaints and method for producing the sensorSIEMENS AG·Filed 1993·Granted Dec 13, 1994·55 cites·19 claims
- 0782US5741733AMethod for the production of a three-dimensional circuit arrangementSIEMENS AG·Filed 1995·Granted Apr 21, 1998·69 cites·26 claims
- 0877US5930596ASemiconductor component for vertical integration and manufacturing methodSIEMENS AG·Filed 1995·Granted Jul 27, 1999·54 cites·3 claims
- 0975US5834332AMicromechanical semiconductor components and manufacturing method thereforSIEMENS AG·Filed 1997·Granted Nov 10, 1998·31 cites·8 claims
- 1067US5326718AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1992·Granted Jul 5, 1994·33 cites·7 claims
- 1165US5431051ATunnel effect acceleration sensorSIEMENS AG·Filed 1994·Granted Jul 11, 1995·23 cites·3 claims
- 1261US5882963AMethod of manufacturing semiconductor componentsSIEMENS AG·Filed 1997·Granted Mar 16, 1999·30 cites·7 claims
- 1361US5450754APressure sensorSIEMENS AG·Filed 1994·Granted Sep 19, 1995·20 cites·6 claims
- 1458US6441424B1Integrated circuit configuration having at least one capacitor and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 1998·Granted Aug 27, 2002·15 cites·25 claims
- 1555US5498567AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1995·Granted Mar 12, 1996·16 cites·7 claims
- 1655US5177582ACMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the sameSIEMENS AG·Filed 1991·Granted Jan 5, 1993·17 cites·5 claims
- 1754US6022786AMethod for manufacturing a capacitor for a semiconductor arrangementSIEMENS AG·Filed 1998·Granted Feb 8, 2000·15 cites·13 claims
- 1852US5422303AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1994·Granted Jun 6, 1995·17 cites·17 claims
- 1948US6583464B1Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistorINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jun 24, 2003·10 cites·5 claims
- 2047US6637554B2Rail brake elementRAWIE A GMBH & CO·Filed 2002·Granted Oct 28, 2003·1 cites·3 claims
- 2147US5969534ASemiconductor testing apparatusSIEMENS AG·Filed 1995·Granted Oct 19, 1999·13 cites·8 claims
- 2246US6043543ARead-only memory cell configuration with trench MOS transistor and widened drain regionSIEMENS AG·Filed 1998·Granted Mar 28, 2000·8 cites·11 claims
- 2345US5700702AMethod for manufacturing an acceleration sensorSIEMENS AG·Filed 1995·Granted Dec 23, 1997·12 cites·9 claims
- 2443US5212104AMethod for manufacturing an mos transistorSIEMENS AG·Filed 1992·Granted May 18, 1993·9 cites·14 claims
- 2543US2005270826A1Semiconductor memory device and method for producing a semiconductor memory deviceMIKOLAJICK THOMAS·Filed 2005·Application pending·0 cites
- 2642US5358882AMethod for manufacturing a bipolar transistor in a substrateSIEMENS AG·Filed 1993·Granted Oct 25, 1994·12 cites·8 claims
- 2738US6211019B1Read-only memory cell device and method for its productionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Apr 3, 2001·4 cites·11 claims
- 2835US5273934AMethod for producing a doped region in a substrateSIEMENS AG·Filed 1992·Granted Dec 28, 1993·8 cites·17 claims
- 2934US5460982AMethod for manufacturing lateral bipolar transistorsSIEMENS AG·Filed 1994·Granted Oct 24, 1995·3 cites·7 claims
- 3032US5455185AMethod for manufacturing a bipolar transistor having base and collector in a vertical sequenceSIEMENS AG·Filed 1992·Granted Oct 3, 1995·4 cites·4 claims
- 3131US5714397AProcess for producing lateral bipolar transistorSIEMENS AG·Filed 1996·Granted Feb 3, 1998·1 cites·4 claims
- 3230US5610531ATesting method for semiconductor circuit levelsSIEMENS AG·Filed 1995·Granted Mar 11, 1997·0 cites·13 claims
- 3330US5407843AMethod for manufacturing lateral bipolar transistorsSIEMENS AG·Filed 1994·Granted Apr 18, 1995·0 cites·4 claims
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