Inventor · disambiguated record
Heiji Kobayashi
Also filed as: KOBAYASHI HEIJI
14 granted patents·6 pending applications·284 citations·filing 1979–2013
92Inventor score
Files withMITSUBISHI ELECTRIC CORP9RENESAS TECH CORP6KOBAYASHI HEIJI3POWERCHIP TECHNOLOGY CORP1YAMAHA MOTOR CO LTD1
Top patents by PatentIndex Score
20 records- 0195USD278892SSnowmobileYAMAHA MOTOR CO LTD·Filed 1982·Granted May 21, 1985·51 cites·1 claims
- 0288US6998319B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2003·Granted Feb 14, 2006·33 cites·19 claims
- 0388US5478759AMethod of manufacturing semiconductor device with retrograde wellsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 26, 1995·98 cites·39 claims
- 0482US8390062B2Vertical channel transistor array and manufacturing method thereofKOBAYASHI HEIJI·Filed 2010·Granted Mar 5, 2013·6 cites·9 claims
- 0577US6215187B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·64 cites·22 claims
- 0675US8536008B2Manufacturing method of vertical channel transistor arrayPOWERCHIP TECHNOLOGY CORP·Filed 2013·Granted Sep 17, 2013·3 cites·13 claims
- 0766US7691713B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2007·Granted Apr 6, 2010·1 cites·4 claims
- 0857US8846485B2Method for fabricating bottom electrode of capacitors of DRAMKOBAYASHI HEIJI·Filed 2010·Granted Sep 30, 2014·1 cites·13 claims
- 0957US6815265B2Method of fabricating a semiconductor device with a passivation filmRENESAS TECH CORP·Filed 2002·Granted Nov 9, 2004·8 cites·5 claims
- 1053US7244655B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2005·Granted Jul 17, 2007·0 cites·4 claims
- 1151USD263038SMotorcycleKOBAYASHI HEIJI·Filed 1979·Granted Feb 16, 1982·4 cites·1 claims
- 1250US2010190306A1Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2010·Application pending·0 cites
- 1345US6483192B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 19, 2002·2 cites·8 claims
- 1444US6864580B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Mar 8, 2005·5 cites·11 claims
- 1543US6229172B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 8, 2001·8 cites·14 claims
- 1638US2003073280A1Semiconductor device and fabrication process thereforMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1737US2002098686A1Semiconductor device and fabrication process thereforMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1836US2003160303A1Semiconductor chip mounting waferMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1936US2003008499A1Method of manufacturing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2030US2002109522A1Test system and test method of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Heiji Kobayashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →