Inventor · disambiguated record
Heng-Kuang Lin
Also filed as: LIN HENG-KUANG
16 granted patents·8 pending applications·18 citations·filing 2006–2018
88Inventor score
Top patents by PatentIndex Score
24 records- 0182US10062766B1Hetero-junction schottky diode deviceNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Aug 28, 2018·4 cites·18 claims
- 0277US8629012B2Method for forming antimony-based FETs monolithicallyLIN HENG-KUANG·Filed 2012·Granted Jan 14, 2014·5 cites·20 claims
- 0371US10411098B2Semiconductor device and manufacturing method thereofNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Sep 10, 2019·1 cites·13 claims
- 0471US9331154B2High electron mobility transistorEPISTAR CORP·Filed 2014·Granted May 3, 2016·3 cites·18 claims
- 0566US9356128B2Semiconductor power deviceEPISTAR CORP·Filed 2014·Granted May 31, 2016·3 cites·13 claims
- 0663US8253167B2Method for forming antimony-based FETs monolithicallyLIN HENG-KUANG·Filed 2010·Granted Aug 28, 2012·2 cites·20 claims
- 0751US9299824B2Field effect transistorEPISTAR CORP·Filed 2014·Granted Mar 29, 2016·0 cites·20 claims
- 0849US10217855B2Semiconductor substrate and semiconductor deviceNUVOTON TECHNOLOGY CORP·Filed 2017·Granted Feb 26, 2019·0 cites·18 claims
- 0949US9647102B2Field effect transistorEPISTAR CORP·Filed 2016·Granted May 9, 2017·0 cites·20 claims
- 1048US10431454B2Semiconductor substrate and manufacturing method thereofNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Oct 1, 2019·0 cites·11 claims
- 1146US10276454B2Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layersNUVOTON TECHNOLOGY CORP·Filed 2017·Granted Apr 30, 2019·0 cites·13 claims
- 1245US9711683B2Semiconductor device and the method of manufacturing the sameEPISTAR CORP·Filed 2014·Granted Jul 18, 2017·0 cites·20 claims
- 1345US9627523B2High electron mobility transistorEPISTAR CORP·Filed 2016·Granted Apr 18, 2017·0 cites·16 claims
- 1443US10847643B2Enhancement mode HEMT device and method of forming the sameNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Nov 24, 2020·0 cites·19 claims
- 1543US10367088B2Nitride semiconductor deviceNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Jul 30, 2019·0 cites·20 claims
- 1641US2019096879A1Semiconductor device and method of manufacturing the sameNUVOTON TECHNOLOGY CORP·Filed 2018·Application pending·0 cites
- 1739US10446472B2Nitride semiconductor deviceNUVOTON TECHNOLOGY CORP·Filed 2018·Granted Oct 15, 2019·0 cites·18 claims
- 1839US2015137179A1Power deviceHUGA OPTOTECH INC·Filed 2013·Application pending·0 cites
- 1938US2019207019A1Enhancement mode hemt deviceNUVOTON TECHNOLOGY CORP·Filed 2018·Application pending·0 cites
- 2034US2018240877A1TransistorNUVOTON TECHNOLOGY CORP·Filed 2018·Application pending·0 cites
- 2132US2007278523A1Structure and a method for monolithic integration of HBT, depletion-mode HEMT and enhancement-mode HEMT on the same substrateWIN SEMICONDUCTORS CORP·Filed 2006·Application pending·0 cites
- 2231US2013075822A1Structures and methods of self-aligned gate for sb-based fetsHO HAN-CHIEH·Filed 2011·Application pending·0 cites
- 2331US2015340484A1Power deviceEPISTAR CORP·Filed 2015·Application pending·0 cites
- 2430US2012292663A1Structure and Method for Monolithically Fabrication Sb-Based E/D Mode MISFETsLIN HENG-KUANG·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →