Inventor · disambiguated record
Hengyang James Lin
Also filed as: LIN HENGYANG · LIN HENGYANG JAMES
4 granted patents·56 citations·filing 1998–2010
74Inventor score
Top patents by PatentIndex Score
4 records- 0188US8284600B15-transistor non-volatile memory cellPOPLEVINE PAVEL·Filed 2010·Granted Oct 9, 2012·17 cites·7 claims
- 0268US6100590ALow capacitance multilevel metal interconnect structure and method of manufactureNAT SEMICONDUCTOR CORP·Filed 1998·Granted Aug 8, 2000·36 cites·13 claims
- 0361US7863644B1Bipolar transistor and method of forming the bipolar transistor with a backside contactNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jan 4, 2011·2 cites·20 claims
- 0441US7188044B1World-wide distributed testing for integrated circuitsNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 6, 2007·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →