Inventor · disambiguated record
Henricus G. R. Maas
Also filed as: MAAS HENRICUS G R · MAAS HENRICUS GODEFRIDUS R · MAAS HENRICUS GODEFRIDUS RAFAE
39 granted patents·697 citations·filing 1982–2000
98Inventor score
Files withPHILIPS CORP39
Top patents by PatentIndex Score
39 records- 0192US6368921B1Manufacture of trench-gate semiconductor devicesPHILIPS CORP·Filed 2000·Granted Apr 9, 2002·112 cites·10 claims
- 0285US5504036AMethod of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slicePHILIPS CORP·Filed 1995·Granted Apr 2, 1996·83 cites·6 claims
- 0381US6177707B1Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metalization is attached by means of an adhesivePHILIPS CORP·Filed 1999·Granted Jan 23, 2001·64 cites·4 claims
- 0477US6177295B1Method of manufacturing semiconductor devices with “chip size package”PHILIPS CORP·Filed 1999·Granted Jan 23, 2001·57 cites·5 claims
- 0576US4514251AMethod of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantationPHILIPS CORP·Filed 1984·Granted Apr 30, 1985·41 cites·17 claims
- 0667US5689138AIntegrated microwave semiconductor device with active and passive componentsPHILIPS CORP·Filed 1995·Granted Nov 18, 1997·33 cites·20 claims
- 0762US4449287AMethod of providing a narrow groove or slot in a substrate region, in particular a semiconductor substrate regionPHILIPS CORP·Filed 1982·Granted May 22, 1984·24 cites·20 claims
- 0858US5399899ABipolar epitaxial cascode with low-level base connectionPHILIPS CORP·Filed 1993·Granted Mar 21, 1995·20 cites·5 claims
- 0958US4750971AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1987·Granted Jun 14, 1988·21 cites·3 claims
- 1057US5531016AMethod of manufacturing a thin-film magnetic headPHILIPS CORP·Filed 1994·Granted Jul 2, 1996·17 cites·28 claims
- 1154US4689872AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1985·Granted Sep 1, 1987·21 cites·4 claims
- 1252US4659428AMethod of manufacturing a semiconductor device and semiconductor device manufactured by means of the methodPHILIPS CORP·Filed 1986·Granted Apr 21, 1987·17 cites·12 claims
- 1350US5770487AMethod of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallizationPHILIPS CORP·Filed 1996·Granted Jun 23, 1998·17 cites·10 claims
- 1448US4717689AMethod of forming semimicron grooves in semiconductor materialPHILIPS CORP·Filed 1985·Granted Jan 5, 1988·16 cites·35 claims
- 1546US4619039AMethod of manufacturing a semiconductor device and device manufactured by the use of the methodPHILIPS CORP·Filed 1984·Granted Oct 28, 1986·9 cites·7 claims
- 1645US5780354AMethod of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material glued on a support waferPHILIPS CORP·Filed 1995·Granted Jul 14, 1998·11 cites·20 claims
- 1745US4574468AMethod of manufacturing a semiconductor device having narrow coplanar silicon electrodesPHILIPS CORP·Filed 1984·Granted Mar 11, 1986·11 cites·6 claims
- 1844US5753537AMethod of manufacturing a semiconductor device for surface mountingPHILIPS CORP·Filed 1997·Granted May 19, 1998·13 cites·9 claims
- 1944US5629554ASemiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substratePHILIPS CORP·Filed 1996·Granted May 13, 1997·9 cites·10 claims
- 2044US4937202AMethod of manufacturing field effect transistors having self-registering source and drain regions to minimize capacitancesPHILIPS CORP·Filed 1988·Granted Jun 26, 1990·8 cites·11 claims
- 2142US4969026AMesa bipolar transistor with edge contactsPHILIPS CORP·Filed 1990·Granted Nov 6, 1990·9 cites·3 claims
- 2241US5405789AMethod of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning mannerPHILIPS CORP·Filed 1993·Granted Apr 11, 1995·8 cites·5 claims
- 2338US4825267AField effect transistor having self-registering source and drain regions to minimize capacitancesPHILIPS CORP·Filed 1985·Granted Apr 25, 1989·5 cites·10 claims
- 2437US4907049ACharge-coupled semiconductor device having an improved electrode structurePHILIPS CORP·Filed 1989·Granted Mar 6, 1990·8 cites·4 claims
- 2537US4545110AMethod of manufacturing an insulated gate field effect devicePHILIPS CORP·Filed 1984·Granted Oct 8, 1985·8 cites·16 claims
- 2636US5739591ASemiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a glue layer and on which a pattern of conductor tracks is fastenedPHILIPS CORP·Filed 1997·Granted Apr 14, 1998·5 cites·20 claims
- 2735US5008209AMethod of manufacturing a semiconductor device including outdiffusion from polysilicon rimsPHILIPS CORP·Filed 1990·Granted Apr 16, 1991·7 cites·6 claims
- 2834US6104081ASemiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support waferPHILIPS CORP·Filed 1998·Granted Aug 15, 2000·4 cites·13 claims
- 2933US5268313AMethod of manufacturing a semiconductor device having a spacerPHILIPS CORP·Filed 1992·Granted Dec 7, 1993·6 cites·8 claims
- 3032US6172408B1Radiation-sensitive semiconductor device and method of manufacturing samePHILIPS CORP·Filed 1999·Granted Jan 9, 2001·7 cites·7 claims
- 3131US5736452AMethod of manufacturing a hybrid integrated circuitPHILIPS CORP·Filed 1997·Granted Apr 7, 1998·2 cites·6 claims
- 3231US4636826ACharge coupled devices having narrow coplanar silicon electrodesPHILIPS CORP·Filed 1985·Granted Jan 13, 1987·3 cites·4 claims
- 3330US5828122ASemiconductor body with a substrate glued to a support bodyPHILIPS CORP·Filed 1997·Granted Oct 27, 1998·0 cites·13 claims
- 3430US5569952ASemiconductor device with a semiconductor element provided in a mesa structurePHILIPS CORP·Filed 1994·Granted Oct 29, 1996·3 cites·7 claims
- 3530US4894702AHigh efficiency, small geometry semiconductor devicesPHILIPS CORP·Filed 1988·Granted Jan 16, 1990·4 cites·5 claims
- 3629US5024956AMethod of manufacturing a semiconductor device including mesa bipolar transistor with edge contactsPHILIPS CORP·Filed 1990·Granted Jun 18, 1991·2 cites·3 claims
- 3728US4981806AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1990·Granted Jan 1, 1991·5 cites·12 claims
- 3826US5221856ABipolar transistor with floating guard region under extrinsic basePHILIPS CORP·Filed 1992·Granted Jun 22, 1993·5 cites·8 claims
- 3925US5039623AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1990·Granted Aug 13, 1991·2 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →