Inventor · disambiguated record
Hema Lata Rao Maddi
Also filed as: MADDI HEMA LATA RAO
0 granted patents·2 pending applications·0 citations·filing 2023–2023
Files withGLOBALFOUNDRIES US INC2
Top patents by PatentIndex Score
2 records- 0157US2024290617A1Field-effect transistors with a gate dielectric layer formed on a surface treated by atomic layer etchingGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0257US2024290879A1Field-effect transistors with deposited gate dielectric layersGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →