Inventor · disambiguated record
Helmuth Murrmann
Also filed as: MURRMANN HELMUTH
10 granted patents·138 citations·filing 1975–1979
90Inventor score
Files withSIEMENS AG10
Top patents by PatentIndex Score
10 records- 0181US4063967AMethod of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant sourceSIEMENS AG·Filed 1975·Granted Dec 20, 1977·49 cites·10 claims
- 0258US4082571AProcess for suppressing parasitic components utilizing ion implantation prior to epitaxial depositionSIEMENS AG·Filed 1976·Granted Apr 4, 1978·18 cites·13 claims
- 0357US4045251AProcess for producing an inversely operated transistorSIEMENS AG·Filed 1976·Granted Aug 30, 1977·17 cites·2 claims
- 0452US4001465AProcess for producing semiconductor devicesSIEMENS AG·Filed 1975·Granted Jan 4, 1977·14 cites·11 claims
- 0547US4109273AContact electrode for semiconductor componentSIEMENS AG·Filed 1977·Granted Aug 22, 1978·8 cites·1 claims
- 0644US4323913AIntegrated semiconductor circuit arrangementSIEMENS AG·Filed 1979·Granted Apr 6, 1982·10 cites·2 claims
- 0742US4029527AMethod of producing a doped zone of a given conductivity type in a semiconductor bodySIEMENS AG·Filed 1975·Granted Jun 14, 1977·10 cites·1 claims
- 0837US4014714AMethod of producing a monolithic semiconductor deviceSIEMENS AG·Filed 1975·Granted Mar 29, 1977·6 cites·9 claims
- 0930US3963524AMethod of producing a semiconductor deviceSIEMENS AG·Filed 1975·Granted Jun 15, 1976·3 cites·16 claims
- 1029US4118251AProcess for the production of a locally high, inverse, current amplification in a planar transistorSIEMENS AG·Filed 1976·Granted Oct 3, 1978·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →