Inventor · disambiguated record
Heinrich Schlangenotto
Also filed as: SCHLANGENOTTO HEINRICH
7 granted patents·78 citations·filing 1978–1995
85Inventor score
Top patents by PatentIndex Score
7 records- 0162US5063428ASemiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zoneEUPEC GMBH & CO KG·Filed 1987·Granted Nov 5, 1991·20 cites·20 claims
- 0258US5923055AControllable semiconductor componentDAIMLER BENZ AG·Filed 1995·Granted Jul 13, 1999·23 cites·19 claims
- 0339US5731605ATurn-off power semiconductor component with a particular ballast resistor structureDAIMLER BENZ AG·Filed 1995·Granted Mar 24, 1998·11 cites·16 claims
- 0437US5856683AMOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET elementDAIMLER BENZ AG·Filed 1995·Granted Jan 5, 1999·7 cites·6 claims
- 0536US5773858APower diodeEUPEC GMBH & CO KG·Filed 1993·Granted Jun 30, 1998·7 cites·14 claims
- 0633US4243998ASafety circuit for a semiconductor elementLICENTIA GMBH·Filed 1978·Granted Jan 6, 1981·7 cites·7 claims
- 0724US4918509AGate turn-off thyristorLICENTIA GMBH·Filed 1989·Granted Apr 17, 1990·3 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →