Inventor · disambiguated record
Heon-Jong Shin
Also filed as: SHIN HEON-JONG
57 granted patents·19 pending applications·564 citations·filing 1995–2024
98Inventor score
Top patents by PatentIndex Score
76 records- 0196US9905468B2Semiconductor devices and methods of forming the sameKIM SUNG MIN·Filed 2016·Granted Feb 27, 2018·15 cites·20 claims
- 0295US11769769B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·19 claims
- 0391US11316010B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0490US10763256B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 1, 2020·2 cites·20 claims
- 0590US10340219B2Semiconductor device having a metal viaSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 2, 2019·7 cites·21 claims
- 0690US9589899B2Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structuresJUN HWI-CHAN·Filed 2015·Granted Mar 7, 2017·11 cites·18 claims
- 0788US10643898B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·3 cites·20 claims
- 0887US6384464B1Integrated circuit device including dummy patterns surrounding padsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 7, 2002·46 cites·20 claims
- 0985US7781282B2Shared contact structure, semiconductor device and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·13 cites·8 claims
- 1085US7550822B2Dual-damascene metal wiring patterns for integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 23, 2009·13 cites·9 claims
- 1184US6846710B2Method for manufacturing self-aligned BiCMOSSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 25, 2005·38 cites·19 claims
- 1283US10553484B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·3 cites·19 claims
- 1382US9812552B2Methods for fabricating semiconductor devicesJUN HWI-CHAN·Filed 2015·Granted Nov 7, 2017·5 cites·19 claims
- 1482US7768128B2Semiconductor memory devices including a damascene wiring lineSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 3, 2010·12 cites·12 claims
- 1580US8114730B2Shared contact structure, semiconductor device and method of fabricating the semiconductor deviceYOO ABRAHAM·Filed 2010·Granted Feb 14, 2012·7 cites·10 claims
- 1680US5929483ASemiconductor device having spacer and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 27, 1999·52 cites·9 claims
- 1779US12457797B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·18 claims
- 1878US10103266B2Semiconductor devices having lower and upper fins and method for fabricating the sameKIM SUNG MIN·Filed 2015·Granted Oct 16, 2018·2 cites·20 claims
- 1978US6207519B1Method of making semiconductor device having double spacerSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 27, 2001·48 cites·6 claims
- 2077US11876019B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·19 claims
- 2177US6552438B2Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 22, 2003·34 cites·29 claims
- 2275US8350354B2Semiconductor device structure with strain layerSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 8, 2013·4 cites·9 claims
- 2375US7863152B2Semiconductor device structure with strain layer and method of fabricating the semiconductor device structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·6 cites·9 claims
- 2475US7008841B2Semiconductor device having metal-insulator-metal capacitor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·18 cites·15 claims
- 2575US5821590ASemiconductor interconnection device with both n- and p-doped regionsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 13, 1998·42 cites·8 claims
- 2674US10665588B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 26, 2020·1 cites·18 claims
- 2774US7211515B2Methods of forming silicide layers on source/drain regions of MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 1, 2007·16 cites·28 claims
- 2872US11201086B2Semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·16 claims
- 2972US10879239B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 3070US12426227B2Method of manufacturing a semiconductor device having a node capping pattern and a gate capping patternSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 3168US8013455B2Semiconductor device having padsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 6, 2011·4 cites·18 claims
- 3266US11721581B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 3364US7358155B2Scribe-line structures and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 15, 2008·1 cites·18 claims
- 3464US6274906B1MOS transistor for high-speed and high-performance operation and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 14, 2001·20 cites·20 claims
- 3563US2025241012A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3662US11778801B2Semiconductor device having a node capping pattern and a gate capping patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3762US6218715B1MOS transistor for high-speed operationSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 17, 2001·17 cites·2 claims
- 3861US10818549B2Semiconductor devices including contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·11 claims
- 3961US10319858B2Semiconductor devices having lower and upper fins and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 11, 2019·0 cites·20 claims
- 4061US5863833AMethod for forming side contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 26, 1999·27 cites·11 claims
- 4161US2025318202A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4260US2025056843A1Semiconductor device that includes a multi-bridge channel field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4359US6479337B2Semiconductor device including a charge-dispersing region and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 12, 2002·5 cites·9 claims
- 4459US2025056838A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4558US6639282B2Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 28, 2003·8 cites·21 claims
- 4658US2019252540A1Semiconductor devices having lower and upper fins and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 4756US10658288B2Semiconductor device having a metal viaSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 19, 2020·0 cites·20 claims
- 4856US6329697B1Semiconductor device including a charge-dispersing region and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 11, 2001·4 cites·5 claims
- 4956US2024162120A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 5056US2008142927A1Scribe-line structures and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →