Inventor · disambiguated record
Heonjong Shin
Also filed as: SHIN HEONJONG
30 granted patents·24 pending applications·100 citations·filing 1992–2025
95Inventor score
Top patents by PatentIndex Score
54 records- 0192US12382681B2Multi-bridge channel field effect transistor with reduced gate-channel leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·2 cites·20 claims
- 0291US9515172B2Semiconductor devices having isolation insulating layers and methods of manufacturing the sameSHIN HEONJONG·Filed 2015·Granted Dec 6, 2016·22 cites·20 claims
- 0389US10923475B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·6 cites·5 claims
- 0488US11264386B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·15 claims
- 0588US10964791B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 30, 2021·5 cites·20 claims
- 0687US10497608B2Semiconductor devices having isolation insulating layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 3, 2019·4 cites·20 claims
- 0787US10373953B2Semiconductor device including a semiconductor extension layer between active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 6, 2019·5 cites·11 claims
- 0886US11177362B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·2 cites·19 claims
- 0986US10204821B2Semiconductor devices having isolation insulating layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 12, 2019·4 cites·19 claims
- 1079US10825810B2Semicondcutor device including a semiconductor extension layer between active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·2 cites·17 claims
- 1178US2025385185A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1277US11393909B2Semiconductor devices inlcluding a fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 19, 2022·2 cites·18 claims
- 1377US2025351474A1Multi-bridge channel field effect transistor with reduced gate-channel leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1477US2025338553A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1576US9978746B2Semiconductor devices and methods of manufacturing the sameYEO KYOUNG HWAN·Filed 2016·Granted May 22, 2018·4 cites·20 claims
- 1676US7923805B2Semiconductor device including high voltage and low voltage MOS devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 12, 2011·6 cites·15 claims
- 1773US2024413216A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1871US10453838B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 22, 2019·1 cites·20 claims
- 1969US11705454B2Active regions via contacts having various shaped segments off-set from gate via contactSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 2069US2025241002A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2167US9673300B2Semiconductor devices including a gate core and a fin active core and methods of fabricating the sameHA SEUNGSEOK·Filed 2015·Granted Jun 6, 2017·3 cites·20 claims
- 2266US12356659B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 2366US11728342B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2465US12094940B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 2564US12014957B2Semiconductor device having a source/drain contact plug with an upwardly protruding portionSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·19 claims
- 2664US11735640B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2764US9728643B2Semiconductor devices having a spacer on an isolation regionPARK BYUNGJAE·Filed 2015·Granted Aug 8, 2017·2 cites·19 claims
- 2863US11978775B2Method of fabricating semiconductor devices including a fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 2963US2025120165A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3062US11335679B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
- 3162US2025241060A1Integrated circuit devices having enhanced power delivery networks thereinSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3262US2022399449A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3361US8735238B2Method of fabricating a semiconductor device including high voltage and low voltage MOS devicesCHANG CHANSAM·Filed 2011·Granted May 27, 2014·2 cites·19 claims
- 3461US2025240999A1Integrated circuit device including a gate lineSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3560US11538913B2Semiconductor device having silicides and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 3659US2025142882A1Semiconductor device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3758US10636785B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 3856US11309218B2Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 3955US2025096133A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4054US2023402376A1Semiconductor devices including conductive structuresSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4154US2024371731A1Semiconductor device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4254US2024363536A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4353US2024321873A1Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4453US2024321980A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4553US2025081526A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4652US9576613B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 21, 2017·2 cites·13 claims
- 4752US2024258228A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4852US2024421216A1Integrated circuit semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4952US2024234502A9Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 5051US2024030345A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →