Inventor · disambiguated record
Hiromi Abe
Also filed as: ABE HIROMI
36 granted patents·3 pending applications·333 citations·filing 1994–2019
97Inventor score
Files withRENESAS TECH CORP12HITACHI LTD10RENESAS ELECTRONICS CORP9HITACHI ULSI SYS CO LTD3AKIBA TOSHIHIKO2
Top patents by PatentIndex Score
39 records- 0192US10566255B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Feb 18, 2020·2 cites·11 claims
- 0292US8101433B2Semiconductor device and manufacturing method of the sameAKIBA TOSHIHIKO·Filed 2009·Granted Jan 24, 2012·15 cites·13 claims
- 0387US9646901B2Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark areaRENESAS ELECTRONICS CORP·Filed 2016·Granted May 9, 2017·3 cites·16 claims
- 0487US7094655B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Aug 22, 2006·8 cites·33 claims
- 0586US6989600B2Integrated circuit device having reduced substrate size and a method for manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Jan 24, 2006·45 cites·15 claims
- 0686US5904556AMethod for making semiconductor integrated circuit device having interconnection structure using tungsten filmHITACHI LTD·Filed 1996·Granted May 18, 1999·63 cites·15 claims
- 0778US8912540B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 16, 2014·2 cites·15 claims
- 0877US9911673B2Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark areaRENESAS ELECTRONICS CORP·Filed 2017·Granted Mar 6, 2018·1 cites·16 claims
- 0977US6780757B2Semiconductor integrated circuit device and method for making the sameRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·17 cites·6 claims
- 1075US7569457B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Aug 4, 2009·3 cites·3 claims
- 1174US6610564B2Method of fabricating semiconductor deviceFiled 2001·Granted Aug 26, 2003·11 cites·19 claims
- 1274US6031288ASemiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereofHITACHI LTD·Filed 1996·Granted Feb 29, 2000·36 cites·49 claims
- 1373US6583049B2Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 2001·Granted Jun 24, 2003·13 cites·7 claims
- 1473US6503803B2Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layerHITACHI LTD·Filed 2001·Granted Jan 7, 2003·16 cites·32 claims
- 1571US7553766B2Method of fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2007·Granted Jun 30, 2009·2 cites·9 claims
- 1671US7314830B2Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobaltRENESAS TECH CORP·Filed 2007·Granted Jan 1, 2008·2 cites·10 claims
- 1770US6861344B2Method of manufacturing a semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Mar 1, 2005·16 cites·6 claims
- 1867US6670251B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Dec 30, 2003·7 cites·8 claims
- 1964US6268658B1Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereofHITACHI LTD·Filed 2000·Granted Jul 31, 2001·10 cites·7 claims
- 2064US2019057913A1Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2163US10134648B2Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Nov 20, 2018·0 cites·13 claims
- 2262US6858484B2Method of fabricating semiconductor integrated circuit deviceHITACHI LTD·Filed 2003·Granted Feb 22, 2005·5 cites·9 claims
- 2361US9165845B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Oct 20, 2015·0 cites·8 claims
- 2460US8034715B2Method of fabricating semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Oct 11, 2011·0 cites·14 claims
- 2558US6300206B1Method for manufacturing semiconductor deviceHITACHI LTD·Filed 1997·Granted Oct 9, 2001·22 cites·37 claims
- 2658US2016035636A1Manufacturing Method of Semiconductor DeviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2756US6545326B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2001·Granted Apr 8, 2003·7 cites·22 claims
- 2855US8415199B2Manufacturing method of semiconductor deviceAKIBA TOSHIHIKO·Filed 2011·Granted Apr 9, 2013·0 cites·2 claims
- 2952US7314805B2Method for fabricating semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Jan 1, 2008·0 cites·14 claims
- 3051US7118983B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Oct 10, 2006·0 cites·18 claims
- 3151US7064040B2Method of fabricating semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2005·Granted Jun 20, 2006·0 cites·7 claims
- 3251US6693001B2Process for producing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 1997·Granted Feb 17, 2004·17 cites·13 claims
- 3350US7094642B2Method of fabricating semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 22, 2006·0 cites·40 claims
- 3446US7214577B2Method of fabricating semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2004·Granted May 8, 2007·0 cites·9 claims
- 3543US6300237B1Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 1999·Granted Oct 9, 2001·7 cites·23 claims
- 3642US2004235289A1Semiconductor integrated circuit device and method for making the sameFiled 2004·Application pending·0 cites
- 3741US7074665B2Method of fabricating semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2003·Granted Jul 11, 2006·0 cites·15 claims
- 3840US6538329B2Semiconductor integrated circuit device and method for making the sameHITACHI LTD·Filed 2001·Granted Mar 25, 2003·0 cites·6 claims
- 3930US5453760APosition detecting apparatusSHARP KK·Filed 1994·Granted Sep 26, 1995·3 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →