Inventor · disambiguated record
Hiroyuki Amishiro
Also filed as: AMISHIRO HIROYUKI
17 granted patents·10 pending applications·351 citations·filing 1991–2024
95Inventor score
Top patents by PatentIndex Score
27 records- 0195US6288447B1Semiconductor device including a plurality of interconnection layersMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 11, 2001·171 cites·13 claims
- 0279US7045865B2Semiconductor device with resistor elements formed on insulating filmRENESAS TECH CORP·Filed 2001·Granted May 16, 2006·18 cites·22 claims
- 0376US7821078B2Semiconductor device having resistor elements and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 26, 2010·4 cites·10 claims
- 0471US6299314B1Semiconductor device with electrical isolation meansMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·16 cites·20 claims
- 0568US6518592B1Apparatus, method and pattern for evaluating semiconductor device characteristicsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·12 cites·4 claims
- 0663US6838732B2Semiconductor device and method for manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Jan 4, 2005·11 cites·11 claims
- 0763US6468857B2Method for forming a semiconductor device having a plurality of circuits partsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 22, 2002·10 cites·2 claims
- 0863US6037630ASemiconductor device with gate electrode portion and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·22 cites·15 claims
- 0960US2025290867A1Semiconductor inspection apparatus and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2024·Application pending·0 cites
- 1058US6445071B1Semiconductor device having an improved multi-layer interconnection structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 3, 2002·8 cites·6 claims
- 1158US5600170AInterconnection structure of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·24 cites·3 claims
- 1257US6541862B2Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 1, 2003·6 cites·2 claims
- 1352US6407573B1Device for evaluating characteristic of insulated gate transistorMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 18, 2002·17 cites·11 claims
- 1449US2006175679A1Semiconductor device and method for manufacturing the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1547US6835647B2Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing methodRENESAS TECH CORP·Filed 2003·Granted Dec 28, 2004·2 cites·5 claims
- 1645US5394338AModule cell generating device for a semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 28, 1995·17 cites·4 claims
- 1744US8089136B2Semiconductor deviceAMISHIRO HIROYUKI·Filed 2010·Granted Jan 3, 2012·0 cites·10 claims
- 1844US6779160B2Apparatus, method and pattern for evaluating semiconductor device characteristicsRENESAS TECH CORP·Filed 2003·Granted Aug 17, 2004·2 cites·4 claims
- 1944US5243560ASemiconductor memory device for storing a plurality of data on a word basis and operating method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 7, 1993·11 cites·14 claims
- 2042US2003030075A1Semiconductor device and method of arranging transistors for forming TEGMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2141US2023133459A1Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2020·Application pending·0 cites
- 2239US2003015798A1Semiconductor device and method of fabricating the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2338US2002180047A1Method of fabricating a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2437US2003001270A1Semiconductor device having an improved multi-layer interconnection structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2537US2002081846A1Semiconductor deviceFiled 2001·Application pending·0 cites
- 2636US2002167034A1Semiconductor device evaluation method and apparatus, semiconductor device manufacturing control method, semiconductor device manufacturing method, and recording mediumMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 2734US2001048162A1Semiconductor device having a structure of a multilayer interconnection unit and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →