Inventor · disambiguated record
Hiromichi Enami
Also filed as: ENAMI HIROMICHI
26 granted patents·4 pending applications·927 citations·filing 1988–2010
97Inventor score
Top patents by PatentIndex Score
30 records- 0198US6755932B2Plasma processing system and apparatus and a sample processing methodHITACHI LTD·Filed 2001·Granted Jun 29, 2004·290 cites·11 claims
- 0290US5734188ASemiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Mar 31, 1998·73 cites·13 claims
- 0388US4949162ASemiconductor integrated circuit with dummy pedestalsHITACHI LTD·Filed 1988·Granted Aug 14, 1990·91 cites·21 claims
- 0485US5646489APlasma generator with mode restricting meansHITACHI LTD·Filed 1995·Granted Jul 8, 1997·43 cites·46 claims
- 0583US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0679US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0776US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 0875US6923885B2Plasma processing system and apparatus and a sample processing methodHITACHI LTD·Filed 2003·Granted Aug 2, 2005·11 cites·19 claims
- 0975US5352324AEtching method and etching apparatus thereforHITACHI LTD·Filed 1993·Granted Oct 4, 1994·59 cites·16 claims
- 1074US5433789AMethods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwavesHITACHI LTD·Filed 1993·Granted Jul 18, 1995·22 cites·27 claims
- 1173US5917211ASemiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Jun 29, 1999·37 cites·11 claims
- 1273US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 1371US7686917B2Plasma processing system and apparatus and a sample processing methodHITACHI LTD·Filed 2007·Granted Mar 30, 2010·2 cites·7 claims
- 1466US6754552B2Control apparatus for plasma utilizing equipmentHITACHI LTD·Filed 2001·Granted Jun 22, 2004·11 cites·13 claims
- 1566US5401356AMethod and equipment for plasma processingHITACHI LTD·Filed 1992·Granted Mar 28, 1995·44 cites·32 claims
- 1665US5264712ASemiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Nov 23, 1993·27 cites·10 claims
- 1764US5543336ARemoving damage caused by plasma etching and high energy implantation using hydrogenHITACHI LTD·Filed 1994·Granted Aug 6, 1996·39 cites·17 claims
- 1862US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 1961US7526948B2Device and method for detecting foreign material on the surface of plasma processing apparatusHITACHI HIGH TECH CORP·Filed 2005·Granted May 5, 2009·1 cites·13 claims
- 2061US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 2161US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 2256US7169254B2Plasma processing system and apparatus and a sample processing methodHITACHI LTD·Filed 2003·Granted Jan 30, 2007·3 cites·13 claims
- 2351US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 2450US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 2550US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 2650US2006260746A1Plasma processing apparatusIKUHARA SHOJI·Filed 2005·Application pending·0 cites
- 2748US2010297783A1Plasma Processing MethodIKUHARA SHOJI·Filed 2010·Application pending·0 cites
- 2848US2010132888A1Plasma Processing ApparatusIKUHARA SHOJI·Filed 2010·Application pending·0 cites
- 2947US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 3044US2004177925A1Plasma processing system and apparatus and a sample processing methodFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →