Inventor · disambiguated record
Hirotaka Hamamura
Also filed as: HAMAMURA HIROTAKA
22 granted patents·9 pending applications·36 citations·filing 2002–2022
92Inventor score
Files withHITACHI HIGH TECH CORP7HITACHI CHEMICAL CO LTD4HITACHI LTD4RENESAS ELECTRONICS CORP4RENESAS TECH CORP4
Top patents by PatentIndex Score
31 records- 0186US9214516B2Field effect silicon carbide transistorMINE TOSHIYUKI·Filed 2012·Granted Dec 15, 2015·8 cites·12 claims
- 0285US11276816B2Method of manufacturing magnetic tunnel junction and magnetic tunnel junctionHITACHI HIGH TECH CORP·Filed 2019·Granted Mar 15, 2022·3 cites·2 claims
- 0376US8410543B2Semiconductor storage device and manufacturing method thereofYANAGI ITARU·Filed 2007·Granted Apr 2, 2013·6 cites·16 claims
- 0473US9508611B2Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor elementHITACHI LTD·Filed 2013·Granted Nov 29, 2016·3 cites·15 claims
- 0572US7682990B2Method of manufacturing nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Mar 23, 2010·5 cites·13 claims
- 0671US9318558B2MOS field effect transistorMINE TOSHIYUKI·Filed 2012·Granted Apr 19, 2016·3 cites·11 claims
- 0770US9714262B2Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2013·Granted Jul 25, 2017·1 cites·8 claims
- 0869US11678583B2Method of manufacturing magnetic tunnel junction and magnetic tunnel junctionHITACHI HIGH TECH CORP·Filed 2022·Granted Jun 13, 2023·0 cites·2 claims
- 0966US2015228812A1Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photololtaic cell element, method of producing photovoltaic cell element, and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 1064US10062759B2Silicon carbide semiconductor device and method for manufacturing sameHITACHI LTD·Filed 2013·Granted Aug 28, 2018·1 cites·5 claims
- 1163US8084315B2Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridationYAMAMOTO KATSUHIKO·Filed 2009·Granted Dec 27, 2011·2 cites·10 claims
- 1261US12444618B2Etching method and etching apparatusHITACHI HIGH TECH CORP·Filed 2021·Granted Oct 14, 2025·0 cites·9 claims
- 1359US12237174B2Etching methodHITACHI HIGH TECH CORP·Filed 2021·Granted Feb 25, 2025·0 cites·5 claims
- 1459US2015214391A1Passivation film, coating material, photovoltaic cell element and semiconductor substrate having passivation filmHITACHI CHEMICAL CO LTD·Filed 2013·Application pending·0 cites
- 1558US7719051B2Nonvolatile semiconductor storage device and manufacturing method thereofRENESAS TECH CORP·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 1655US2016211389A1Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photov oltaic cell element, method of producing photovoltaic cell element, and photovoltaic cellHITACHI CHEMICAL CO LTD·Filed 2016·Application pending·0 cites
- 1755US2014327066A1Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1854US9673339B2Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 6, 2017·0 cites·16 claims
- 1954US8816426B2Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 26, 2014·0 cites·25 claims
- 2051US9000448B2Silicon carbide semiconductor deviceHAMAMURA HIROTAKA·Filed 2011·Granted Apr 7, 2015·1 cites·8 claims
- 2150US2024297046A1Etching methodHITACHI HIGH TECH CORP·Filed 2022·Application pending·0 cites
- 2249US6777296B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Aug 17, 2004·2 cites·4 claims
- 2347US2009275183A1Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 2446US11164906B2Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction elementHITACHI HIGH TECH CORP·Filed 2019·Granted Nov 2, 2021·0 cites·17 claims
- 2546US7863134B2Nonvolatile semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 4, 2011·0 cites·8 claims
- 2641US9570601B2Semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 2013·Granted Feb 14, 2017·0 cites·11 claims
- 2740US2013341711A1Semiconductor deviceHITACHI LTD·Filed 2013·Application pending·0 cites
- 2839US2015044840A1Method for producing silicon carbide semiconductor deviceKOBAYASHI KEISUKE·Filed 2012·Application pending·0 cites
- 2937US2012280369A1Method for manufacturing semiconductor device, substrate processing apparatus, and semiconductor deviceSAITO TATSUYUKI·Filed 2010·Application pending·0 cites
- 3035US11165015B2Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction deviceHITACHI HIGH TECH CORP·Filed 2018·Granted Nov 2, 2021·0 cites·10 claims
- 3133US9117836B2Silicon carbide semiconductor device and manufacturing method thereofTEGA NAOKI·Filed 2012·Granted Aug 25, 2015·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →