Inventor · disambiguated record
Hirofumi Harada
Also filed as: HARADA HIROFUMI
48 granted patents·11 pending applications·480 citations·filing 1981–2020
98Inventor score
Top patents by PatentIndex Score
59 records- 0191US6624469B1Vertical MOS transistor having body region formed by inclined ion implantationSEIKO INSTR INC·Filed 2000·Granted Sep 23, 2003·61 cites·10 claims
- 0289US6710402B2Vertical MOS transistor and a method of manufacturing the sameSEIKO INSTR INC·Filed 2001·Granted Mar 23, 2004·52 cites·3 claims
- 0387US6844578B2Semiconductor integrated circuit device and manufacturing method thereforSEIKO INSTR INC·Filed 2002·Granted Jan 18, 2005·42 cites·42 claims
- 0482US6570229B1Semiconductor deviceSEIKO INSTR INC·Filed 2000·Granted May 27, 2003·31 cites·8 claims
- 0582US6511885B2Vertical MOS transistor and method of manufacturing the sameSEIKO INSTR INC·Filed 2001·Granted Jan 28, 2003·30 cites·19 claims
- 0680US8152227B2Structure of mounting cowl top coverKURATA TAKENORI·Filed 2010·Granted Apr 10, 2012·11 cites·8 claims
- 0778US9142543B2Semiconductor device having an ESD protection circuitSEIKO INSTR INC·Filed 2014·Granted Sep 22, 2015·6 cites·9 claims
- 0877US6495884B2Vertical MOS transistorSEIKO INSTR INC·Filed 2001·Granted Dec 17, 2002·23 cites·19 claims
- 0971US6013940APoly-crystalline silicon film ladder resistorSEIKO INSTR INC·Filed 1995·Granted Jan 11, 2000·32 cites·39 claims
- 1070US10276672B2Vertical semiconductor device having a trench gate a base contact regionSII SEMICONDUCTOR CORP·Filed 2017·Granted Apr 30, 2019·1 cites·4 claims
- 1170US10014253B2Method of manufacturing semiconductor integrated circuit deviceSII SEMICONDUCTOR CORP·Filed 2017·Granted Jul 3, 2018·1 cites·7 claims
- 1270US7228339B2Information storage output system and information storage output serviceTOSHIBA TEC KK·Filed 2002·Granted Jun 5, 2007·19 cites·12 claims
- 1370US7100158B2Program management apparatus, program management system, and program management methodTOSHIBA TEC KK·Filed 2002·Granted Aug 29, 2006·19 cites·2 claims
- 1468US9893073B2Semiconductor nonvolatile memory elementSII SEMICONDUCTOR CORP·Filed 2017·Granted Feb 13, 2018·1 cites·5 claims
- 1566US9613970B2Semiconductor nonvolatile memory elementSII SEMICONDUCTOR CORP·Filed 2016·Granted Apr 4, 2017·1 cites·5 claims
- 1666US6005275ASemiconductor acceleration sensor with cantileverSEIKO INSTR INC·Filed 1995·Granted Dec 21, 1999·30 cites·35 claims
- 1765US5959343ASemiconductor deviceSEIKO INSTR R & D CENTER INC·Filed 1997·Granted Sep 28, 1999·25 cites·30 claims
- 1864US7602044B2Semiconductor device having polycrystalline silicon resistorsSEIKO INSTR INC·Filed 2006·Granted Oct 13, 2009·2 cites·16 claims
- 1962US7034359B2Vertical MOS transistorSEIKO INSTR INC·Filed 2004·Granted Apr 25, 2006·10 cites·20 claims
- 2061US8604589B2Semiconductor device of polycrystalline silicon resistorsTSUKAMOTO AKIKO·Filed 2006·Granted Dec 10, 2013·3 cites·12 claims
- 2161US7282768B2MOS field-effect transistorSEIKO INSTR INC·Filed 2005·Granted Oct 16, 2007·2 cites·12 claims
- 2261US6525376B1High withstand voltage insulated gate N-channel field effect transistorSEIKO INSTR INC·Filed 1999·Granted Feb 25, 2003·17 cites·4 claims
- 2360US6426258B1Method of manufacturing a semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 1998·Granted Jul 30, 2002·24 cites·6 claims
- 2458US11227913B2Semiconductor device and method of manufacturing the sameABLIC INC·Filed 2020·Granted Jan 18, 2022·0 cites·2 claims
- 2558US6236084B1Semiconductor integrated circuit device having double diffusion insulated gate field effect transistorSEIKO INSTR INC·Filed 1999·Granted May 22, 2001·18 cites·14 claims
- 2656US2003074597A1Repair supporting method, repair supporting server and repair subject multi-functional peripheralTOSHIBA TEC KK·Filed 2002·Application pending·0 cites
- 2756US2003154145A1Membership information integrated management system, and membership information integrated management serviceTOSHIBA TEC KK·Filed 2002·Application pending·0 cites
- 2855US8664727B2Semiconductor integrated circuit deviceHARADA HIROFUMI·Filed 2009·Granted Mar 4, 2014·1 cites·2 claims
- 2955US8169052B2Semiconductor deviceHARADA HIROFUMI·Filed 2008·Granted May 1, 2012·1 cites·1 claims
- 3054US10756169B2Semiconductor device and method of manufacturing the sameABLIC INC·Filed 2019·Granted Aug 25, 2020·0 cites·2 claims
- 3154US10593769B2Method for manufacturing a vertical semiconductor deviceABLIC INC·Filed 2019·Granted Mar 17, 2020·0 cites·7 claims
- 3254US9461038B2Semiconductor device with resistance circuitSEIKO INSTR INC·Filed 2015·Granted Oct 4, 2016·0 cites·18 claims
- 3352US9831176B2Semiconductor integrated circuit device and method of manufacturing the sameSII SEMICONDUCTOR CORP·Filed 2016·Granted Nov 28, 2017·0 cites·9 claims
- 3452US6993526B2Electronic catalog system, catalog data printing method, server, and computer readable recording media recording program used in serverTOSHIBA TEC KK·Filed 2002·Granted Jan 31, 2006·4 cites·11 claims
- 3552US2014054719A1Semiconductor device with resistance circuitSEIKO INSTR INC·Filed 2013·Application pending·0 cites
- 3651US9972625B2Method of manufacturing semiconductor integrated circuit deviceSII SEMICONDUCTOR CORP·Filed 2017·Granted May 15, 2018·0 cites·3 claims
- 3751US7485933B2Semiconductor integrated circuit device having polycrystalline silicon resistor circuitSEIKO INSTR INC·Filed 2005·Granted Feb 3, 2009·3 cites·6 claims
- 3851US2014084378A1Semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2013·Application pending·0 cites
- 3949US10014294B2Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity regionSII SEMICONDUCTOR CORP·Filed 2016·Granted Jul 3, 2018·0 cites·2 claims
- 4049US9698147B2Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistorsSII SEMICONDUCTOR CORP·Filed 2016·Granted Jul 4, 2017·0 cites·12 claims
- 4149US6720633B2High withstand voltage insulated gate N-channel field effect transistorSEIKO INSTR INC·Filed 2002·Granted Apr 13, 2004·3 cites·15 claims
- 4248US9041156B2Semiconductor reference voltage generating deviceYOSHINO HIDEO·Filed 2009·Granted May 26, 2015·0 cites·6 claims
- 4347US9136145B2Semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2013·Granted Sep 15, 2015·0 cites·9 claims
- 4447US7341896B2Method of manufacturing a vertical MOS transistorSEIKO INSTR INC·Filed 2006·Granted Mar 11, 2008·0 cites·8 claims
- 4547US2012228719A1Semiconductor device with resistance circuitHARADA HIROFUMI·Filed 2012·Application pending·0 cites
- 4645US4356158AProcess for producing carbon fibersNIPPON CARBON CO LTD·Filed 1981·Granted Oct 26, 1982·6 cites·5 claims
- 4745US2007006216A1Program management apparatus, program management system, and program management methodTOSHIBA TEC KK·Filed 2006·Application pending·0 cites
- 4844US2015262159A1Merchandise sales data processing device and programTOSHIBA TEC KK·Filed 2015·Application pending·0 cites
- 4943US8551854B2Method of manufacturing a semiconductor deviceKATO SHINJIRO·Filed 2012·Granted Oct 8, 2013·0 cites·20 claims
- 5043US6921949B2Semiconductor integrated circuit deviceSEIKO INSTR INC·Filed 2003·Granted Jul 26, 2005·1 cites·4 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →