Inventor · disambiguated record
Hisao Hayashi
Also filed as: HAYASHI HISAO · MATSUSHITA TAKESHI
69 granted patents·2 pending applications·2,866 citations·filing 1974–2023
99Inventor score
Top patents by PatentIndex Score
71 records- 0199US4003072ASemiconductor device with high voltage breakdown resistanceSONY CORP·Filed 1974·Granted Jan 11, 1977·175 cites·12 claims
- 0297US6153893AThin film semiconductor device for displaySONY CORP·Filed 1996·Granted Nov 28, 2000·255 cites·19 claims
- 0396US5585951AActive-matrix substrateSONY CORP·Filed 1993·Granted Dec 17, 1996·368 cites·15 claims
- 0495US6815240B2Thin film semiconductor device and manufacturing method thereofSONY CORP·Filed 2002·Granted Nov 9, 2004·76 cites·8 claims
- 0594US6943369B2Substrate for integrating and forming a thin film semiconductor device thereonSONY CORP·Filed 2001·Granted Sep 13, 2005·76 cites·25 claims
- 0693US6468839B2Thin film semiconductor device for display and method of producing sameSONY CORP·Filed 1999·Granted Oct 22, 2002·99 cites·4 claims
- 0793US5788467AFan unit structure for an electronic device adapted to be inserted and mounted in a cabinetFUJITSU LTD·Filed 1996·Granted Aug 4, 1998·105 cites·15 claims
- 0892US6020224AMethod for making thin film transistorSONY CORP·Filed 1998·Granted Feb 1, 2000·132 cites·16 claims
- 0989US6552915B2Communications apparatus and plug-in unitFUJITSU LTD·Filed 2001·Granted Apr 22, 2003·62 cites·21 claims
- 1089US4823235AEarth connection device in metal core printed circuit boardFUJITSU LTD·Filed 1987·Granted Apr 18, 1989·75 cites·10 claims
- 1188US5208690ALiquid crystal display having a plurality of pixels with switching transistorsSONY CORP·Filed 1991·Granted May 4, 1993·82 cites·8 claims
- 1288US3971061ASemiconductor device with a high breakdown voltage characteristicSONY CORP·Filed 1974·Granted Jul 20, 1976·39 cites·5 claims
- 1387US4693759AMethod of forming a thin semiconductor filmSONY CORP·Filed 1985·Granted Sep 15, 1987·88 cites·5 claims
- 1486US6440824B1Method of crystallizing a semiconductor thin film, and method of manufacturing a thin-film semiconductor deviceSONY CORP·Filed 2000·Granted Aug 27, 2002·35 cites·13 claims
- 1586US4084986AMethod of manufacturing a semi-insulating silicon layerSONY CORP·Filed 1976·Granted Apr 18, 1978·48 cites·18 claims
- 1685US6906830B1Compact image scanner capable of reading both a light-reflecting article and a light-transmitting articleNEC CORP·Filed 2000·Granted Jun 14, 2005·29 cites·19 claims
- 1785US5140391AThin film MOS transistor having pair of gate electrodes opposing across semiconductor layerSONY CORP·Filed 1990·Granted Aug 18, 1992·68 cites·20 claims
- 1885US4980308AMethod of making a thin film transistorSONY CORP·Filed 1989·Granted Dec 25, 1990·68 cites·1 claims
- 1984US7394514B2Display device and manufacturing method thereforSONY CORPROATION·Filed 2005·Granted Jul 1, 2008·7 cites·6 claims
- 2084US6248606B1Method of manufacturing semiconductor chips for displaySONY CORP·Filed 1998·Granted Jun 19, 2001·62 cites·14 claims
- 2184US4062034ASemiconductor device having a hetero junctionSONY CORP·Filed 1976·Granted Dec 6, 1977·42 cites·9 claims
- 2281US5888839AMethod of manufacturing semiconductor chips for displaySONY CORP·Filed 1995·Granted Mar 30, 1999·56 cites·14 claims
- 2381US4043267ARocket bulletKAWAGUCHIYA FIREARMS·Filed 1974·Granted Aug 23, 1977·31 cites·6 claims
- 2478US6396079B1Thin film semiconductor device having a buffer layerSONY CORP·Filed 1996·Granted May 28, 2002·45 cites·6 claims
- 2576US4496057ARack structure for mounting a communication apparatusFUJITSU LTD·Filed 1983·Granted Jan 29, 1985·36 cites·4 claims
- 2675US5096854AMethod for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 micronsNIPPON SILICONE KK·Filed 1989·Granted Mar 17, 1992·47 cites·15 claims
- 2773US6952021B2Thin-film transistor and method for making the sameSONY CORP·Filed 2002·Granted Oct 4, 2005·15 cites·4 claims
- 2873US6768651B2Communication device and plug-in unit thereforFUJITSU LTD·Filed 2001·Granted Jul 27, 2004·17 cites·12 claims
- 2973US5172203ASemiconductor device with polycrystalline silicon active region and method of fabrication thereofSONY CORP·Filed 1987·Granted Dec 15, 1992·29 cites·4 claims
- 3073US4302763ASemiconductor deviceSONY CORP·Filed 1979·Granted Nov 24, 1981·27 cites·2 claims
- 3173US4161836ABreechblock assembly and an operating mechanism for a fire-arm automatic loadingKAWAGUCHIYA FIREARMS·Filed 1977·Granted Jul 24, 1979·22 cites·6 claims
- 3272US4176372ASemiconductor device having oxygen doped polycrystalline passivation layerSONY CORP·Filed 1977·Granted Nov 27, 1979·28 cites·2 claims
- 3370US5162892ASemiconductor device with polycrystalline silicon active region and hydrogenated passivation layerSONY CORP·Filed 1991·Granted Nov 10, 1992·50 cites·20 claims
- 3470US4308786ATrigger device for automatic gunKAWAGUCHIYA FIREARMS·Filed 1979·Granted Jan 5, 1982·17 cites·3 claims
- 3568US4203780AFe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperatureSONY CORP·Filed 1978·Granted May 20, 1980·22 cites·8 claims
- 3668US4014037ASemiconductor deviceSONY CORP·Filed 1975·Granted Mar 22, 1977·24 cites·5 claims
- 3767US5616960AMultilayered interconnection substrate having a resin wall formed on side surfaces of a contact holeSONY CORP·Filed 1994·Granted Apr 1, 1997·31 cites·5 claims
- 3866US8779417B2Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereofSONY CORP·Filed 2013·Granted Jul 15, 2014·1 cites·21 claims
- 3966US6653179B1Method for manufacturing a thin film semiconductor device, method for manufacturing a display device, method for manufacturing a thin film transistors, and method for forming a semiconductor thin filmSONY CORP·Filed 1999·Granted Nov 25, 2003·31 cites·25 claims
- 4066US4062707AUtilizing multiple polycrystalline silicon masks for diffusion and passivationSONY CORP·Filed 1976·Granted Dec 13, 1977·23 cites·3 claims
- 4165US7209251B2Document input/output system, apparatus management server and method for setting informationNEC CORP·Filed 2001·Granted Apr 24, 2007·6 cites·24 claims
- 4264US4651674AApparatus for vapor depositionSONY CORP·Filed 1985·Granted Mar 24, 1987·25 cites·6 claims
- 4363US5602723ASubrack deviceFUJITSU LTD·Filed 1995·Granted Feb 11, 1997·29 cites·17 claims
- 4463US4207798AGas operating system for loading shot shell in an automatic gunKAWAGUCHIYA FIREARMS·Filed 1977·Granted Jun 17, 1980·16 cites·2 claims
- 4562US6015720AMethod of forming polycrystalline semiconductor thin filmSONY CORP·Filed 1995·Granted Jan 18, 2000·28 cites·5 claims
- 4662US5242844ASemiconductor device with polycrystalline silicon active region and method of fabrication thereofSONY CORP·Filed 1991·Granted Sep 7, 1993·21 cites·20 claims
- 4762US5049453AGalvannealed steel sheet with distinguished anti-powdering and anti-flaking properties and process for producing the sameNIPPON STEEL CORP·Filed 1990·Granted Sep 17, 1991·36 cites·78 claims
- 4861US2024123467A1Method for coating vehicle bodyTOYOTA MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 4959US8558981B2Display device and manufacturing method thereforHAYASHI HISAO·Filed 2008·Granted Oct 15, 2013·1 cites·10 claims
- 5058US6410961B1Thin film semiconductor device and display deviceSONY CORP·Filed 1998·Granted Jun 25, 2002·17 cites·7 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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